References
- J. Park, C. S. Kim, Y.S. Kim, Y. C. Park, H. J. Park, B. S. Bae, J. S. Park, and H. S. Kim, "The effect of ITO and Mo electrodes on the properties and stablity of In-Ga-Zn-O thin film transistors," Journal of Electronics, vol. 36, no. 1, pp. 129-134, Jun. 2016.
- J. R. Yim, S. Y. Jung, H. W. Yeon, J. Y. Kwon, Y. J. Lee, J. H. Lee, and Y. C. Joo, "Effect of Metal Electrode on the Electrical Performance of Amorphous In-Ga-Zn-O Thin Film Transistor," Japanese Journal of Applied Physics, vol.51, pp. 011401-1-5, Dec. 2011.
- Y. Ueoka, Y. Ishikawa, J. P. Bermundo, H. Yamazki, S. Urakawa, Y. Osada, M.. Horita, and Y. Uraoka, "Effect of contact material on amorphous InGaZnO thin-film transistor characteristics," Japanese Journal of Applied Physics, vol.53, pp.03CC04-1-5, Feb. 2014. https://doi.org/10.7567/JJAP.53.03CC04
- J. Jiang, J. Sun, W. Dou, and Q. Wan, "Junctionless flexible oxide based thin film transistors on paper substrates," IEEE Electron Device Letters, vol.33, no.1, pp.65-67, Jan. 2012. https://doi.org/10.1109/LED.2011.2172973
- J. Zhou, G. Wu, L. Guo, L. Zhu, and Q. Wan, "Flexible transparent junctionless TFTs with oxygentuned Indium-Zin-Oxide channels," IEEE Electron Device Letters, vol.34, no.2, pp.888-890, Feb. 2013. https://doi.org/10.1109/LED.2013.2260819
- J. P. Colinge, C. W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, I. Ferain, P. Razavi, B. Oneill, A. Blake, M. White, A.M. Kelleher, B. McCarthy, and R. Murphy, "Nanowire transistor without junction," Nature Nanotecnology, vol.5, no.3, pp.225-229, Mar. 2010. https://doi.org/10.1038/nnano.2010.15
- C. W. Lee, I. Ferain, A. Afzalian, R. Yan, N. D. Akhavan, P. Razavi, and J.P. Colinge, "Performance estimation of junctionless multigate transistors," Solid-State Electronics, vol.54, pp.97-103, Feb. 2010. https://doi.org/10.1016/j.sse.2009.12.003
- S. M. Lee, J. T. Park, "Device Design Guideline to Reduce the Threshold Voltage Variation with Fin Width in Junctionless MuGFETs," Journal of the Korea Institute of Information and Communication Engineering, vol.18. no.1, pp.135-141, 2014. https://doi.org/10.6109/jkiice.2014.18.1.135
- X. Ding, J. Zhang, . Li, H. Zhang, W. Shi, X. Jiang, Z, Zhang, "Influence of the InGaZnO channel layer thickness on the performance of thin film transistors," Superlattice and Microstructures, vol. 63, pp. 70-78, Aug. 2013. https://doi.org/10.1016/j.spmi.2013.08.017
- M. Nakata, H. Tsuji, H. sao, Y. Nakajima, Y. Fujisaki, T. Takei, T. Yamamoto, and H. Fujikako, "Influence of oxide semiconductor thickness on thinfilm transistor characteristics," Japanese Journal of Applied Physics, vol.52, pp. 03BB04-1-5, Mar. 2013. https://doi.org/10.7567/JJAP.52.03BB04
- S.M. Kim, M.J. Ahan, W.J. Cho, J.T.Park, "Device instability of amorphous InGaZnO thin film transistors with transparent source and drain," Microelectronics Reliability, vol.64, pp. 575-579, Oct. 2016. https://doi.org/10.1016/j.microrel.2016.07.037
- K.H. Lee, T.G. Kang, K.Y. Lee, J.T. Park, "Hot carrier induced device degradation in amorphous InGaZnO thin film transistors with source and drain electrode materials," Journal of the Korea Institute of Information and Communication Engineering, vol.21. no.1, pp.82-89, 2017. https://doi.org/10.6109/jkiice.2017.21.1.82
- C. H. Jo, S. W. Jun, W. J. Kim, I. S. Hur, H. Y. Bae, S. J. Choi, D. H. Kim, and D. M. Kim, "Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress," Applied Physics Letters, vol.102, pp. 143502-1-5, Apr. 2013. https://doi.org/10.1063/1.4800172
- T. Y. Hsieh, T. C. Chang, T. C. Chen, and M. Y. Tsai, "Review of Present Reliability Challenges in Amorphous In-Ga-Zn-O Thin Film Transistors," ECS Journal of Solid State Science and Technology, vol. 3, no. 9, pp. Q3058-Q3070, Aug. 2014. https://doi.org/10.1149/2.013409jss
- B. K. Ryu, H. K. Noh, E. A. Choi, and K. J. Chang, "O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors," Applied Physics Letters, vol. 97, no. 7, pp. 022108-1-3, Jul. 2010. https://doi.org/10.1063/1.3464964
- D. S. kong, H. W. jung, Y. S. Kim, M. K. Bae, J. M. Jang, J. H. Kim, W. J. Kim, I. S. Hur, D. M. Kim, and D. H. Kim, "Effects of the active layer thickness on the negative bias illumination stressinduced instability in amorphous InGaZnO thin-film transistors," Journal of the Korean Physical Society, vol.59, no. 2, pp. 505-510, Feb. 2011. https://doi.org/10.3938/jkps.59.505
- E.N. Cho, J.H. Kang, and I.G. Yun, "Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors," Microelectronics Reliability, vol.51, pp.1792-1795, Oct. 2011. https://doi.org/10.1016/j.microrel.2011.07.018
- A. H. Chen, H. T. Cao, H. Z. Zhang, L. Y. Ling, Z. M. Liu, Z. Yu, Q. W, "Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor," Microelectronic Engineering, vol. 87, pp.2019-2023, Jan. 2010. https://doi.org/10.1016/j.mee.2009.12.081
- S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, "Effect of channel layer thickness on characteristics and stability of amorphous hafnium-Indium-Zinc oxide thin film transistors," Japanese Journal of Applied Physics, vol.50, pp. 024104-1-3, Feb. 2011. https://doi.org/10.7567/JJAP.50.024104