한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제30권7호
  • /
  • Pages.423-426
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  • 2017
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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1,700 V급 Static Induction Thyristor 소자 최적화

Optimization of 1,700 V Static Induction Thyristor Devices

  • 문경숙 (가천대학교 글로벌캠퍼스) ;
  • 구상모 (광운대학교 전자재료공학과)
  • 투고 : 2017.05.07
  • 심사 : 2017.05.16
  • 발행 : 2017.07.01
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초록

The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thick-epitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, $t_{off}$, of SITH, which may be reduced to below ${\sim}0.26{\mu}s$ for the proposed 1,700 V SITH devicesafter optimization.

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참고문헌

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