현대 전력모듈의 소형화 및 GaN 기반 전력반도체의 모노리식 집적화 기술

  • 한상우 (홍익대학교 전자정보통신공학부) ;
  • 차호영 (홍익대학교 전자전기공학부)
  • Published : 2017.06.01

Abstract

Keywords

References

  1. O. Goualard, N. Videau, TB. Doan, T. Lebey, V. Bley, and T. Meynard, "Integrated Screen Printed Capacitors in a GaN DC-DC Converter Allowing Double Side Cooling", In Proceedings of the IEEE 5th Electronics System-integration Technology Conference, Helsinki, Finland, Sep 16-18, pp. 1-5, (2014).
  2. Z. Liu, X. Huang, M. Mu, Y. Yang, FC. Lee, and Q. Li, "Design and Evaluation of GaN-Based Dual-Phase Interleaved MHz Critical Mode PFC Converter", In Proceedings of IEEE Energy Conversion Congress and Exposition, Pittsburgh, USA, Sep 14-18, pp. 611-616, (2014).
  3. J. W. Johnson, A. P. Zhang, W. B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, and J. I. Chyi, "Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers." IEEE Transactions on Electron devices 49.1 32-36 (2002). https://doi.org/10.1109/16.974745
  4. Z. Zhang, J. Fu, Y. Liu, and P. C. Sen "Switching Loss Analysis Considering Parasit ic Loop Inductance with Current Source Drivers for Buck Converters", In Proceedings of Applied Power Electronics Conference and Exposition (APEC), CA, USA, Feb. 21-25, pp. 1482-86 (2010).
  5. Z. Chen, D. Boroyevich, and R. Burgos, "Experimental Parametric Study of the Parasitic Inductance Influence on MOSFET Switching Characteristics", In proceedings of the 2010 International Power Electronics Conference, Sapporo, Japan, Jun 21-24, pp. 164-169 (2010).
  6. B. R. Park, J. Y. Lee, J. G. Lee, D. M. Lee, M. K. Kim, and H. Y. Cha "Schottky barrier diode embeddd AlGaN/GaN switching transistor.", Semicon Sci Technol, 28, 125003, (2013). https://doi.org/10.1088/0268-1242/28/12/125003
  7. C. Wonsuk and S. Dongkook, "Did You Make Layout Adjustments to Use Super-Junction MOSFETs", On semiconducter, (2014). [DOI: http://blog.fairchildsemi.com/2014/make-layout-adjustments-use-super-junctionmosfets-part-1/#.WRF1PvnyiUl]
  8. A. Sawle, M. Standing, T. Sammon, and A. Woodworth, "DirectFET: a proprietary new source mounted power package for board mounted power", In Proceedings of the 43rd Power Conversion and Intelligent Motion Conference (PCIM'01), (2001).
  9. Y. Liu, "Trends of power semiconductor wafer level packaging" Microelectronics Reliability, 50, 514-521 (2010). https://doi.org/10.1016/j.microrel.2009.09.002
  10. J. Strydom, M. de Rooij, and A. Lidow, "Gallium nitride transistor packaging advances and thermal modeling", EDN China, 1-13 (2012).
  11. GS66508T, "Preliminary datasheet gan systems," Rev 151230
  12. H. A. Mantooth, M. D. Glover, and P. Shepherd, "Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems," IEEE Journal of Emerging and Selected Topics in Power Electron., 2, 374-385 (2014). https://doi.org/10.1109/JESTPE.2014.2313511
  13. J. Wang, Z. Shen, C. DiMarino, R. Burgos, and D. Boroyevich, "Gate driver design for 1.7 kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection", In Applied Power Electronics Conference and Exposition (APEC), pp. 516-523 (2016).
  14. AN-2296, SM72295: Highly Integrated Gate Driver for 800VA to 3KVA Inverter (2013),
  15. Application Note, External Booster for Driver IC Revision AN2013-10 Revision 1.6, (2014),
  16. S. W Han, S. H. Park, H. S. Kim, M. G. Jo, and H. Y. Cha, "Normally-off AlGaN/GaN-on-Si MOS-HFET with a Monolithically Integrated Single Stage Inverter as a Gate Driver",Electron Lett, 53, 198-199 (2017). https://doi.org/10.1049/el.2016.2813
  17. K. S. Boutros et al., "Normally-off 5 A/1100 V GaN-on-silicon device for high voltage applications," in IEDM Tech. Dig., Dec. pp. 1-3 (2009).
  18. Y. Uemoto et al., "Gate injection transistor (GIT)-A normally-off AlGaN/GaN power transistor using conductivity modulation," IEEE Trans. Electron Devices, 54, 3393-3399, (2007). https://doi.org/10.1109/TED.2007.908601
  19. W. Chen et al., "High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors," Appl. Phys. Lett., 92, 253501, (2008). https://doi.org/10.1063/1.2951615
  20. B.-R. Park et al., "High-quality ICPCVD SiO2 for normally off AlGaN/GaN-on-Si recessed MOSHFETs," IEEE Electron Device Lett., 34, 354-356, (2013). https://doi.org/10.1109/LED.2012.2236678
  21. S. W. Han et al., "Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si Metal-oxide- semiconductor heterojunction field- effect transistor," Appl. Phys. Exp., 7, 111002, (2014). https://doi.org/10.7567/APEX.7.111002
  22. X. Huang et al., "Evaluation and application of 600 V GaN HEMT in cascode structure," in Proc. 28th Annu. IEEE Appl. Power Electron. Conf. Expo. (APEC), Mar. pp. 1279-1286. (2013).
  23. W. Zhang et al., "Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter," in Proc. IEEE Energy Convers. Congr. Expo., pp. 3571-3578. (2013).
  24. S. W. Han, S. H. Park, J. G. Lee, J. Lim, and H. Y. Cha, "AlGaN/GaN Metal-Oxide- Semiconductor Heterojunct ion Field-Ef fect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation", IEEE Electron Device Letters, 36, 540-542 (2015). https://doi.org/10.1109/LED.2015.2427202