Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Investigation on Intermittent Life Testing Program for IGBT

  • Cheng, Yu (School of Reliability and System Engineering, Beihang University) ;
  • Fu, Guicui (School of Reliability and System Engineering, Beihang University) ;
  • Jiang, Maogong (School of Reliability and System Engineering, Beihang University) ;
  • Xue, Peng (School of Reliability and System Engineering, Beihang University)
  • Received : 2016.09.13
  • Accepted : 2017.02.07
  • Published : 2017.05.20
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Abstract

The reliability issue of IGBT is a concern for researchers given the critical role the device plays in the safety of operations of the converter system. The reliability of power devices can be estimated from the intermittent life test, which aims to simulate typical applications in power electronics in an accelerated manner to obtain lifetime data. However, the test is time-consuming, as testing conditions are not well considered and only rough provisions have been made in the current standards. Acceleration of the test by changing critical test conditions is controversial due to the activation of unexpected failure mechanisms. Therefore, full investigations were conducted on critical test conditions of intermittent life test. A design optimization process for IGBT intermittent life testing program was developed to save on test times without imposing additional failure mechanisms. The applicability of the process has been supported by a number of tests and failure analysis of the test results. The process proposed in this paper can guide the test process for other power semiconductors.

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References

  1. F. Blaabjerg, Z. Chen, and S. B. Kjaer, "Power electronics as efficient interface in dispersed power generation systems," IEEE Trans. Power Electron., Vol. 19, No. 5, pp. 1184-1194, Sep. 2004. https://doi.org/10.1109/TPEL.2004.833453
  2. F. Blaabjerg, R. Teodorescu, M. Liserre, and V. Timbus, "Overview of control and grid synchronization for distributed power generation systems," IEEE Trans. Ind. Electron., Vol. 53, No. 5, pp. 1398-1409, Oct. 2006. https://doi.org/10.1109/TIE.2006.881997
  3. C. Bailey, H. Lu, and T. Tilford, "Predicting the reliability of power electronic modules," in Proc. ICEPT, pp. 809-813, 2007.
  4. U. M. Choi, S. Joergensen, and F. Blaabjerg, "Advanced accelerated power cycling test for reliability investigation of power device modules," IEEE Trans. Power Electron., Vol. 31, No. 12, pp. 8371-8386, Dec. 2016. https://doi.org/10.1109/TPEL.2016.2521899
  5. S. Yang, A. Bryant, P. Mawby, and D. Xiang, "An industry-based survey of reliability in power electronic converters," IEEE Trans. Ind. Appl., Vol. 47, No. 3, pp. 3151-3157, May 2011.
  6. U. M. Choi, F. Blaabjerg, and K. B. Lee, "Study and handling methods of power IGBT module failures in power electronic converter systems," IEEE Trans. Power Electron., Vol. 30, No. 5,pp. 2517-2533, May 2015. https://doi.org/10.1109/TPEL.2014.2373390
  7. Power cycling JESD22-A122, JEDEC, Arlington, VA, USA, 2007.
  8. M. Held, P. Jacob, G. Nicoletti, P. Scacco, and M. Poech, "Fast power cycling test of IGBT modules in traction application," in Proc. International Conference on Power Electronics and Drive Systems, Vol. 1, pp. 425-430, 1997.
  9. L. R. Gopireddy, M. Tolbert, and B. Ozpineci, "Power cycle testing of power switches: a literature survey," IEEE Trans. Power Electron., Vol. 30, No. 5, pp. 2465-2473, May 2015. https://doi.org/10.1109/TPEL.2014.2359015
  10. V. Smet, F. Forest, J. J. Huselstein, and F. Richardeau, "Ageing and failure modes of IGBT modules in high-temperature power cycling," IEEE Trans. Ind. Electron.," Vol. 58, No. 10, pp. 4931-4941, Oct. 2011. https://doi.org/10.1109/TIE.2011.2114313
  11. M. Junghaenel, R. Schmidt, J. Strobel, and U. Scheurmann, "Investigation on isolated failure mechanisms in active power cycle testing," in Proc. Pcim Europe, pp. 251-258, 2015.
  12. U. Scheuermann and S. Schuler, "Power cycling results for different control strategies," Microelectronics Reliability, Vol. 50, No. 9-11, pp. 1203-1209, Sep. 2010. https://doi.org/10.1016/j.microrel.2010.07.135
  13. J. Lutz, "Packaging and reliability of power modules," in Proc. CIPS, pp. 1-8, 2014.
  14. U. Scheuermann and R. Schmidt, "Impact of load pulse duration on power cycling lifetime of Al wire bonds," Microelectronics Reliability, Vol. 53, No. 9-11, pp. 1687-1691, Sep. 2013. https://doi.org/10.1016/j.microrel.2013.06.019
  15. H. Oh, B. Han, P. Mccluskey, and C. Han, "Physics-offailure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: a review," IEEE Trans. Power Electron., Vol. 30, No. 5, pp. 2413-2426, May 2015. https://doi.org/10.1109/TPEL.2014.2346485
  16. M. A. Rodriguez, A. Claudio, D. Theilliol, and L. G. Vela, "A new fault detection technique for IGBT based on gate voltage monitoring," in Proc. PESC, pp. 1001-1005, 2007.
  17. V. Smet, F. Forest, J. J. Huselstein, A. Rashed, and F. Richardeau, "Evaluation of Vce monitoring as a real-time method to estimate aging of bond wire-IGBT modules stressed by power cycling," IEEE Trans. Ind. Electron., Vol. 60, No. 7, pp. 2760-2770, Jul. 2013. https://doi.org/10.1109/TIE.2012.2196894
  18. M. Tounsi, A. Oukaour, B. Tala-lghil, H. Gualous, B. Boudart, and D. Aissani, "Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature," Microelectronics Reliability, Vol. 50, No. 9, pp. 1810-1814, Sep. 2010. https://doi.org/10.1016/j.microrel.2010.07.059
  19. N. Patil, J. Celeya, D. Das, K. Goebel, and M. Pecht, "Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics," IEEE Trans. Rel., Vol. 58, No. 2, pp. 271-276, Jun. 2009. https://doi.org/10.1109/TR.2009.2020134
  20. G. Coquery and R. Lallemand, "Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A-3300V module with AlSiC base plate," Microelectronics Reliability, Vol. 40, No. 8, pp. 1665-1770, Aug. 2000. https://doi.org/10.1016/S0026-2714(00)00191-8
  21. L. Dupont and Y. Avenas, "Preliminary evaluation of thermo-sensitive electrical parameters based on the forward voltage for on-line chip temperature measurements of IGBT devices," IEEE Trans. Ind. Appl., Vol. 51, No. 6, pp. 4028-4035, Nov. 2014.
  22. W. Lai, M. Chen, L. Ran, O. Alatise, S. Xu, and P. Mawby, "Low ${\Delta}T_j$ stress cycle effect in IGBT power module die-attach lifetime modeling," IEEE Trans. Power Electron., Vol. 31, No. 9, pp. 6575-6585, Sep. 2016. https://doi.org/10.1109/TPEL.2015.2501540
  23. R. Darveaux, "Effect of simulation methodology on solder joint crack growth correlation," Journal of Electronic Packaging, Vol. 124, No. 3, pp. 1048-1058, May 2002.
  24. K. Ma, M. Liserre, F. Blaabjerg, and T. Kerekes, "Thermal loading and lifetime estimation for power device considering mission profiles in wind power converter," IEEE Trans. Power Electron., Vol. 30, No. 2, pp. 590-602, Feb. 2015. https://doi.org/10.1109/TPEL.2014.2312335
  25. X. Du, J. Zhang, G. Li, H. Tai, P. Sun, and L. Zhou, "Lifetime estimation for IGBT modules in wind turbine power converter system considering ambient temperature," Microelectronics Reliability, Vol. 65, pp. 69-78, Oct. 2016. https://doi.org/10.1016/j.microrel.2016.07.141

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