JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Reconfigurable 4th Order ΣΔ Modulator with a KT/C Noise Reduction Circuit

  • Received : 2016.07.15
  • Accepted : 2017.01.31
  • Published : 2017.04.30
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Abstract

This paper presents a low power ${\Sigma}{\Delta}$ modulator for an implantable chip to acquire a bio-signal such as EEG, DBS, and EMG. In order to reduce a power consumption of the proposed fourth order modulator, two op-amps utilized for the first two integrators are reconfigured to drive the second two integrators. The KT/C noise reduction circuit in the first two integrators is employed to enhance SNR of the modulator. The proposed circuit was fabricated in a 0.18 um CMOS n-well 1 poly 6 metal process with the active chip core area of $900um{\times}800um$ and the power consumption of 830 uW. Measurement results were demonstrated to be SNDR of 76 dB, DR of 77 dB, ENOB of 12.3 bit at the input frequency of 250 Hz and the clock frequency of 256 kHz. FOM1 and FOM2 were measured to be 41 pJ/step and 142.4 dB, respectively.

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References

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