Transactions on Electrical and Electronic Materials

  • 제18권2호
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  • Pages.70-73
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  • 2017
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers

  • Iftiquar, Sk Md (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
  • 투고 : 2016.04.04
  • 심사 : 2016.11.19
  • 발행 : 2017.04.25
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초록

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

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과제정보

연구 과제 주관 기관 : Korea Institute of Energy Technology Evaluation and Planning (KETEP)

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