Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on 3.3 kV Super Junction Field Stop IGBT According to Design and Process Parameters

설계 및 공정 파라미터에 따른 3.3 kV급 Super Junction FS-IGBT에 관한 연구

  • Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2017.01.23
  • Accepted : 2017.02.10
  • Published : 2017.04.01
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Abstract

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

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References

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