Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Figure of Merit of SnO2/Ag/Nb2O5/SiO2/SnO2 Transparent Conducting Multilayer Film Deposited on Glass Substrate

Glass 위에 증착된 SnO2/Ag/Nb2O5/SiO2/SnO2 다층 투명전도막의 성능지수

  • Kim, Jin-Gyun (Department of Materials Engineering, Chungbuk National University) ;
  • Lee, Sang-Don (Department of Electrical Engineering, Gangneung-Wonju National University) ;
  • Jang, Gun-Eik (Department of Materials Engineering, Chungbuk National University)
  • 김진균 (충북대학교 재료공학과) ;
  • 이상돈 (강릉원주대학교 전기공학과) ;
  • 장건익 (충북대학교 재료공학과)
  • Received : 2016.11.18
  • Accepted : 2016.12.30
  • Published : 2017.02.01
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Abstract

$SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).

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