한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제30권2호
  • /
  • Pages.74-80
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  • 2017
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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ZnO-Zn2BiVO6-Co3O4 세라믹스의 액상소결과 전기적 특성

Liquid Phase Sintering and Electrical Properties of ZnO-Zn2BiVO6-Co3O4 Ceramics

  • 홍연우 (한국세라믹기술원 전자소재부품센터) ;
  • 김유비 (한국세라믹기술원 전자소재부품센터) ;
  • 백종후 (한국세라믹기술원 전자소재부품센터) ;
  • 조정호 (한국세라믹기술원 전자소재부품센터) ;
  • 정영훈 (한국세라믹기술원 전자소재부품센터) ;
  • 윤지선 (한국세라믹기술원 전자소재부품센터) ;
  • 박운익 (한국세라믹기술원 전자소재부품센터)
  • Hong, Youn-Woo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, You-Bi (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Paik, Jong-Hoo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Cho, Jeong-Ho (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeong, Young-Hun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Yun, Ji-Sun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Park, Woon-Ik (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering and Technology)
  • 투고 : 2016.11.10
  • 심사 : 2016.11.30
  • 발행 : 2017.02.01
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초록

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.

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