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차폐형 게이트 구조를 갖는 전력 MOSFET의 전기적 특성 분석에 관한 연구

Analysis of Electrical Characteristics of Shield Gate Power MOSFET for Low on Resistance

  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • 투고 : 2017.01.09
  • 심사 : 2017.01.13
  • 발행 : 2017.02.01

초록

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

키워드

참고문헌

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