한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제30권3호
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  • Pages.185-191
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  • 2017
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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수직배양된 고집적 CdTe-Si 나노구조체의 제조방법

Facile Synthesis of Vertically Aligned CdTe-Si Nanostructures with High Density

  • 임진호 (한국세라믹기술원 나노융합소재센터) ;
  • 황성환 (한국세라믹기술원 나노융합소재센터) ;
  • 정현성 (한국세라믹기술원 나노융합소재센터)
  • Im, Jinho (Nano-Convergence Material Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Hwang, Sung-hwan (Nano-Convergence Material Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Jung, Hyunsung (Nano-Convergence Material Center, Korea Institute of Ceramic Engineering and Technology)
  • 투고 : 2016.08.22
  • 심사 : 2017.01.31
  • 발행 : 2017.03.01
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초록

Cadmium compounds with one dimension (1D) nanostructures have attracted attention for their excellent electrical and optical properties. In this study, vertically aligned CdTe-Si nanostructures with high density were synthesized by several simple chemical reactions. First, l D Te nanostructures were synthesized by silver assisted chemical Si wafer etching followed by a galvanic displacement reaction of the etched Si nanowires. Nanowire length was controlled from 1 to $25{\mu}m$ by adjusting etching time. The Si nanowire galvanic displacement reaction in $HTeO_2{^+}$ electrolyte created hybrid 1D Te-branched Si nanostructures. The sequential topochemical reaction resulted in $Ag_2Te-Si$ nanostructures, and the cation exchange reaction with the hybrid 1D Te-branched Si nanostructures resulted in CdTe-Si nanostructures. Wet chemical processes including metal assisted etching, galvanic displacement, topochemical and cation exchange reactions are proposed as simple routes to fabricate large scale, vertically aligned CdTe-Si hybrid nanostructures with high density.

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