참고문헌
-
H. H. Tippins, "Optical Absorption and Photoconductivity in the Band Edge of
${\beta}-Ga_2O_3$ ," Phys. Rev., Vol. 140, no. 1A, pp. A316-A319, October 1965. https://doi.org/10.1103/PhysRev.140.A316 -
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, "Gallium Oxide (
$Ga_2O_3$ ) Metal-Semiconductor Field-Effect Transistors on Single-Crystal${\beta}-Ga_2O_3$ (010) Substrates," Appl. Phys. Lett., Vol. 100, no. 1, p. 013504, January 2012. https://doi.org/10.1063/1.3674287 -
K. Sasaki, A. Kuramata, T. Masui, E. G. Villora, K. Shimamura, and S. Yamakoshi, "Device-quality
${\beta}-Ga_2O_3$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy," Appl. Phys. Exp., Vol. 5, no. 3, p. 035502, March 2012. https://doi.org/10.1143/APEX.5.035502 - B. J. Baliga, "Power Semiconductor Device Figure of Merit for High-Frequency Applications," IEEE Electron Device Lett., Vol. 10, no. 10, pp. 455-457, October 1989. https://doi.org/10.1109/55.43098
- M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagaio, B. Monemar, A. Kuramata, T. Masui, and S. Yamakoshi, "Recent Advances in Gallium Oxide Device Technologies," Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, 4-6 July 2016.
-
K. Sasaki, M. Higashiwaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "First Demonstration of
${\beta}-Ga_2O_3$ Schottky Barrier Diode with Field Plate Edge Termination," International Conference on Solid State Devices and Materials (SSDM), p. 1076, Sapporo, Japan, 27-30 September 2015. -
H. Murakami, K. Nomura, K. Goto, K. Sasaki, K. Kawara, Q. T. Thieu, R. Togashi, Y. Kumagai, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and A. Koukitu, "Homoepitaxial Growth of
${\beta}-Ga_2O_3$ Layers by Halide Vapor Phase Epitaxy," Appl. Phys. Exp., Vol. 8, no. 1, p. 015503, December 2014. https://doi.org/10.7567/APEX.8.015503 -
M. Higashiwaki, K. Sasaki, M. H. Wong, T. Kamimura, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, "Depletion-Mode
$Ga_2O_3$ MOSFETs on${\beta}-Ga_2O_3$ (010) Substrates with Si-Ion-Implanted Channel and Contacts," IEEE International Electron Devices Meeting (IEDM), pp. 28.7.1-28.7.4, Washington, USA, 9-11 December 2013. -
M. H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, "Field-Plated
$Ga_2O_3$ MOSFETs with a Breakdown Voltage of Over 750 V," IEEE Electron Device Lett., Vol. 37, no. 2, pp. 212-215, February 2016. https://doi.org/10.1109/LED.2015.2512279 -
M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "Temperature-Dependent Capacitance-Voltage and Current-Voltage Characteristics of Pt/
$Ga_2O_3$ (001) Schottky Barrier Diodes Fabricated on${n^-}-Ga_2O_3$ Drift Layers Grown by Halide Vapor Phase Epitaxy," Appl. Phys. Lett., Vol. 108, no. 13, p. 133503, March 2016. https://doi.org/10.1063/1.4945267 -
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, "
$Ga_2O_3$ Schottky Barrier Diodes Fabricated by Using Single-Crystal${\beta}-Ga_2O_3$ (010) Substrates," IEEE Electron Device Lett., Vol. 34, no. 4, pp. 493-495, April 2013. https://doi.org/10.1109/LED.2013.2244057 -
M. Higashiwaki, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "
$Ga_2O_3$ Schottky Barrier Diodes with${n^-}-Ga_2O_3$ Drift Layers Grown by HVPE," 2015 73rd Annual Device Research Conference (DRC), pp. 29-30, 21-24 June 2015. -
B. Song, A. K. Verma, K. Nomoto, M. Zhu, D. Jena, and H. G. Xing, "Vertical
$Ga_2O_3$ Schottky Barrier Diodes on Single-Crystal${\beta}-Ga_2O_3$ (-201) Substrates," 2016 74th Annual Device Research Conference (DRC), 19-22 June 2016.