반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Removal of Post Etch/Ash Residue on an Aluminum Patterned Wafer Using Supercritical CO2 Mixtures with Co-solvents and Surfactants: the Removal of Post Etch/Ash Residue on an Aluminum Patterned Wafer

  • You, Seong-sik (School of Energy, Material & Chemical engineering, Korea University of Technology and Education)
  • 투고 : 2017.06.02
  • 심사 : 2017.06.22
  • 발행 : 2017.06.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.

키워드

참고문헌

  1. Rubin, J.B., Davenhall, L.B., Taylor, C.M.V., Sivils, L.D. and Pierce, T., "$CO_2$-based supercritical fluids as replacements for PR stripping solvents", Internal LAN L paper, 1998.
  2. Rubin, J.B., Davenhall, L.B., Barton, J., Taylor, C.M.V., and Tiefert, K., "A comparison of chilled DI water/ozone and $CO_2$-based supercritical fluids as replacements for PR-stripping solvents", Internal LANL paper, 1998.
  3. Banerjee, S., Cross, P., Borade, R., Raghavan, S., and Stevens, R., "Non-ashing high dose implant strip in IC manufacturing", SEMATECH wafer clean and surface preparation conference, April, 2005.
  4. Joseph, M.D., and Keiper, J.S., "Surfactants and selfassembly in carbon dioxide.", Current opinion in solid and materials science, Vol. 5, pp. 333-341, 2001. https://doi.org/10.1016/S1359-0286(00)00041-3
  5. Shi, J., "Damage Reduction in Dry Resist Stripping Systems," Solid State Technology, Vol. 38, pp. 75-82, 1995. https://doi.org/10.1016/0038-1101(94)E0047-I
  6. Okuyama, Y., Hashimoto, T., and Koguchi, T., "High Dose Ion-Implantation into PR," Journal of the Electrochemical Society, Vol. 125, pp. 1293-1298 1978. https://doi.org/10.1149/1.2131665
  7. Flamm, D., "Dry Plasma Resist Stripping. Part II: Physical Processes," Solid State Technology, Vol. 35, pp. 43-48. 1992. https://doi.org/10.1016/0038-1101(92)90301-R
  8. Dopp, D., "Manufacturing Qualification of an All-Dry Via DeVeil Plasma Process" (paper presented at the Third International Symposium on Environmental Issues with Materials and Processes for the Electronics Semiconductor Industries, Toronto, May 14-18, 2000.
  9. Weibel, G.L., and Ober, C.K., "An overview of supercritical $CO_2$ applications in microelectronics processing", Microelectronics Engineering, Vol. 65, pp. 145-152, 2003. https://doi.org/10.1016/S0167-9317(02)00747-5
  10. You, S.-S., "Removal of Post Etch/Ash Residue on an Aluminum Patterned Wafer Using Supercritical $CO_2$ Mixtures with Co-solvents and Surfactants: sc-$CO_2$ Mixture for the Removal of Post Etch/Ash Residue", Journal of KSDT, Vol. 16, pp1-7, 2017.