반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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SnO2 박막의 열처리 온도에 따른 CO2가스 반응성

CO2 Gas Responsibility of SnO5 Thin Film Depending on the Annealing Temperature

  • Oh, Teresa (Division of Semiconductor, Choengju University)
  • 투고 : 2017.12.12
  • 심사 : 2017.12.23
  • 발행 : 2017.12.31
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초록

The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

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참고문헌

  1. Teresa Oh, "Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator," Korean J. Mater. Res., Vol. 25, No. 7, pp. 1149-1154, (2015).
  2. Sang-Heon Lee, Keon-Tae Park, and Young-Guk Son, "Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films," Korean Journal of Materials Research, Vol. 12, pp. 240-247, (2002). https://doi.org/10.3740/MRSK.2002.12.4.240
  3. Z. M. Jarzebski and J. P. Marton, "Physical Properties of $SnO_2$ Materials Preparation and Defect Structure," Journal of the electrochemical Society, Vol. 123, pp. 199-203, (1976). https://doi.org/10.1149/1.2133010
  4. Oh. T., Tunneling Condition at High Schottky Barrier and Ambipolar Transfer Characteristics in Zinc Oxide Semiconductor Thin Film Transistor, Materials Research Bulletin, Vol. 77, pp. 1-7, (2016). https://doi.org/10.1016/j.materresbull.2015.11.038
  5. Paranjape MA, Mane AU, Raychaudhuri AK, Shalini K, Shivashankar SA, Chakravarty BR, "Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure," Thin Solid Films, Vol. 413(1-2), pp. 8-15, (2002). https://doi.org/10.1016/S0040-6090(02)00446-7
  6. V. Vasu and A. Subrahmanyam, "Electrical and optical properties of sprayed $SnO_2$ films," Thin Solid Film, Vol. 193/194, pp. 973-980, (1990). https://doi.org/10.1016/0040-6090(90)90252-9
  7. Randhawa. H.S, Matthews. M.D, Bunshah, R.F, "$SnO_2$ films prepared by activated reactive evaporation," Thin Solid Films, Vol. 83, pp. 267-271, (1967).
  8. Teresa Oh, "Electrical Characteristics of Thin Film Transistor According to the Schottky Contacts," Korean Journal of Materials Research, Vol. 24, pp. 135-139, (2014). https://doi.org/10.3740/MRSK.2014.24.3.135
  9. J . Maserjian, "Tunneling in thin MOS structures," J. Vac. Sci. Technol., Vol. 11, pp. 996-1003, (1974). https://doi.org/10.1116/1.1318719
  10. S. D. Ganichev, et al. "Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors," Phys. Rev B, Vol. 61(15), pp. 10361-10365, (2000). https://doi.org/10.1103/PhysRevB.61.10361
  11. Yoo Duk-yean, Kim Hyoung-ju, Kim Jun-yeong, Jo Jung-yol, "Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions," Journal of the Semiconductor & Display Technology, Vol. 13, No. 1, pp. 63-66, (2014).
  12. Chang, S. P. et al., "Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structure," Appl. Phys. Lett., Vol. 92, pp. 192104, (2008). https://doi.org/10.1063/1.2924769
  13. S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, and M. Kawasaki1, "Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO," Appl. Phys. Lett., Vol. 93, pp. 123309, (2008). https://doi.org/10.1063/1.2989125
  14. Jung wan Ko, Bo Young Jung, Teresa Oh, "Annealing Effect with Various Ambient Conditions of ITO Thin Film," J. of The Korean Society of Semiconductor & Display Technology, Vol. 14, pp. 20-24, (2015).
  15. Jeffrey C. K. et al.Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure, Appl. Phys. Lett., Vol. 102, pp. 022908, (2013). https://doi.org/10.1063/1.4776735
  16. Sayah Lee, Yoon Seog Song, Hyun Kim, and Sang Ouk Ryu, "Characterization of ALD Processed $Al_2O_3$/$TiO_2$/$Al_2O_3$ Multilayer Films for Encapsulation and Barrier of OLEDs," J. of The Korean Society of Semiconductor & Display Technology, Vol. 16, pp. 1-5, (2017).