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MoS2 두께 변화에 따른 MoS2/p-Si 광센서 특성 연구

MoS2 Thickness-Modulated MoS2/p-Si Photodetector

  • 김홍식 (광전소자연구실, 인천대학교) ;
  • 김준동 (광전소자연구실, 인천대학교)
  • Kim, Hong-Sik (Department of Electrical Engineering and Photoelectric And Energy Device Application Lab (PEDAL), Incheon National University) ;
  • Kim, Joondong (Department of Electrical Engineering and Photoelectric And Energy Device Application Lab (PEDAL), Incheon National University)
  • 투고 : 2017.06.26
  • 심사 : 2017.12.06
  • 발행 : 2017.12.31

초록

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

키워드

참고문헌

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