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Optical and Electrical Properties of Indium Doped PEDOT:PSS

  • Kim, Byoung-Ju (New and Renewable Energy Department, Kyungil University) ;
  • Kang, Kwang-Sun (New and Renewable Energy Department, Kyungil University)
  • 투고 : 2017.08.14
  • 심사 : 2017.12.05
  • 발행 : 2017.12.31

초록

Various wt. ratios of indium were doped to the poly(3,4-ethylenedioxythiophene)-poly(styreneswulfonate) (PEDOT:PSS) to enhance the conductivity and transmittance. The transmittance of the films increased with increasing the amount of indium. The field emission scanning electron microscope (FESEM) image of 2.54 wt. % of indium doped PEDOT:PSS film shows large number of aggregated indium particles. However, more than 2.54 wt. % of indium doped PEDOT:PSS films showed reduced aggregated indium particles. Moreover, 4.47 wt. % of indium doped PEDOT:PSS film showed no aggregated particles. The resistivity of pure PEDOT:PSS film showed $880k{\Omega}{\cdot}cm$. The resistivity of 1.03 wt. % indium doped film reduced approximately 26 times compared with pure PEDOT:PSS film. The resistivity of indium doped film further reduced with increasing the amount of indium, which showed approximately $0.55k{\Omega}{\cdot}cm$ for the PEDOT:PSS film doped 4.47 wt. % of indium.

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참고문헌

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