Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on the Properties of ZnO:Ga Thin Films with Substrate Temperatures

기판 온도에 따른 ZnO:Ga 박막의 특성

  • Kim, Jeong-Gyoo (Department of semiconductor Engineering, Gyeongsang National University) ;
  • Park, Ki-Cheol (Department of semiconductor Engineering, Gyeongsang National University)
  • 김정규 (경상대학교 반도체공학과) ;
  • 박기철 (경상대학교 반도체공학과)
  • Received : 2017.10.26
  • Accepted : 2017.10.30
  • Published : 2017.12.01
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Abstract

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

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References

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