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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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AlGaN/GaN Based Ultra-wideband 15-W High-Power Amplifier with Improved Return Loss

  • Received : 2015.12.11
  • Accepted : 2016.04.05
  • Published : 2016.10.01
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Abstract

An ultra-wideband microwave monolithic integrated circuit high-power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial $0.25-{\mu}m$ AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange-couplers. This three-stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than -15 dB over a wide frequency range.

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References

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