ETRI Journal

  • 제38권4호
  • /
  • Pages.685-694
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  • 2016
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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Surface Micromachined Pressure Sensor with Internal Substrate Vacuum Cavity

  • Je, Chang Han (ICT Materials & Components Research Laboratory, ETRI) ;
  • Choi, Chang Auck (ICT Materials & Components Research Laboratory, ETRI) ;
  • Lee, Sung Q (ICT Materials & Components Research Laboratory, ETRI) ;
  • Yang, Woo Seok (ICT Materials & Components Research Laboratory, ETRI)
  • 투고 : 2015.07.30
  • 심사 : 2016.04.28
  • 발행 : 2016.08.01
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초록

A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side-wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS-compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit-integrated pressure sensor.

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참고문헌

  1. L. Atzori, A. Lera, and G. Morabito, "The Internet of Things: A survey," Comput. Netw., vol. 54, no. 15, 2010, pp. 2787-2805. https://doi.org/10.1016/j.comnet.2010.05.010
  2. K. Lee and D. Cho, "Simultaneous Information and Power Transfer Using Magnetic Resonance," ETRI J., vol. 36, no. 5, Oct. 2014, pp. 808-818. https://doi.org/10.4218/etrij.14.0114.0161
  3. S.E. Moon et al., "Semiconductor-Type MEMS Gas Sensor for Real-Time Environmental Monitoring Applications," ETRI J., vol. 35, no. 4, Aug. 2013, pp. 617-624. https://doi.org/10.4218/etrij.13.1912.0008
  4. B. Bae et al., "Design Optimization of a Piezoresistive Pressure Sensor Considering the Output Signal-to-Noise Ratio," J. Micromechanics Microeng., vol. 14, no. 12, Aug. 2004, pp. 1597-1607. https://doi.org/10.1088/0960-1317/14/12/001
  5. C. Malhaire and D. Darbier, "Design of a Polysilicon-on-Insulator Pressure Sensor with Original Polysilicon Layout for Harsh Environment," Thin Solid Films, vol. 427, 2003, pp. 362-366. https://doi.org/10.1016/S0040-6090(02)01234-8
  6. S. Aravamudhan and S. Bhansali, "Reinforced Piezoresistive Pressure Sensor for Ocean Depth Measurements," Sensors Actuators A: Physical, vol. 142, no. 1, Mar. 2008, pp. 111-117. https://doi.org/10.1016/j.sna.2007.04.036
  7. J. Wang et al., "A Surface Micromachined Pressure Sensor Based on Polysilicon Nanofilm Piezoresistors," Sensors Actuators A: Physical, vol. 228, June 2015, pp. 75-81. https://doi.org/10.1016/j.sna.2015.03.008
  8. C. Wei et al., "TPMS (Tire-Pressure Monitoring System) Sensors: Monolithic Integration of Surface-Micromachined Piezoresistive Pressure Sensor and Self-Testable Accelerometer," Microelelctronic Eng., vol. 91, Mar. 2012, pp. 167-173. https://doi.org/10.1016/j.mee.2011.10.001
  9. E. Kalvesten et al., "The First Surface Micromachined Pressure Sensor for Cardiovascular Pressure Measurements," Annu. Int. Workshop Micro. Electro. Mech. Syst., Heidelberg, German, Jan. 25-29, 1998, pp. 574-579.
  10. K. Sivakumar et al., "Sensitivity Enhancement of Polysilicon Piezo-resistive Pressure Sensors with Phosphorous Diffused Resistors," J. Physics, vol. 34, 2006, pp. 216-221.
  11. X. Lui et al., "Polysilicon Nanofilm Pressure Sensor," Sensors Actuators A: Physical, vol. 154, no. 1, Aug. 2009, pp. 42-45. https://doi.org/10.1016/j.sna.2009.07.015
  12. K. Singh et al., "Fabrication of Electron Beam Physical Vapor Deposited Polysilicon Piezoresistive MEMS Pressure Sensor," Sensors Actuators A: Physical, vol. 223, 2015, pp. 151-158. https://doi.org/10.1016/j.sna.2014.12.033
  13. C.T. Peng et al., "Performance and Package Effect of a Novel Piezoresistive Pressure Sensor Fabricated by Front-Side Etching Technology," Sensors Actuators A: Physical, vol. 119, no. 1, Mar. 2005, pp. 28-37. https://doi.org/10.1016/j.sna.2004.08.013
  14. M. Bao, "Piezoresistive Sensing," in Analysis and Design Principles of MEMS Devices, Amsterdam, Nederland: Elsevier, 2005, pp. 724-725.
  15. M. Aryafar, M. Hamedi, M.M. Ganjeh, "A Novel Temperature Compensated Piezoresistive Pressure Sensor," Meas., vol. 63, Mar. 2015, pp. 25-29. https://doi.org/10.1016/j.measurement.2014.11.032
  16. M. Rydberg and U. Smith, "Temperature Coefficient of Resistivity in Heavily Doped Oxygen-Rich Polysilicon," J. Electrochemical Soc., vol. 148, no. 12, 2001, pp. 725-733. https://doi.org/10.1149/1.1413993