참고문헌
- Y. Wu et al., "A 97.8% Efficient GaN HEMT Boost Converter with 300 W Output Power at 1 MHz," IEEE Electron Device Lett., vol. 29, no. 8, Aug. 2008, pp. 824-826. https://doi.org/10.1109/LED.2008.2000921
- B. Hughes et al., "A 95% Efficient Normally-Off GaN-on-Si HEM Hybrid-IC Boost Converter with 425-W Output Power at 1 MHz," IEEE Compound Semicond. Integr. Circuit Symp., Waikoloa, HI, USA, Oct. 16-19, 2011, pp. 1-3.
- B. Hughes et al., "GaN HFET Switching Characteristics at 350 V/20 A and Synchronous Boost Converter Performance at 1 MHz," IEEE Appl. Power Electron. Conf. Exposition, Orlando, FL, USA, Feb. 5-9, 2012, pp. 2506-2508.
- N. Ikeda et al., "High Power AlGaN/GaN HFET with a High Breakdown Voltage of over 1.8 kV on 4 inch Si Substrates and the Suppression of Current Collapse," Int. Symp. Power Semicond. Devices, May 18-22, 2008, pp. 287-290.
- D. Reusch et al., "Gallium Nitride Based 3D Integrated Nonisolated Point of Load Module," IEEE Appl. Power Electron. Conf. Exposition, Orlando, FL, USA, Feb. 5-9, 2012, pp. 38-45.
- S. Ji, D. Reusch, and F.C. Lee, "High Frequency High Power Density 3D Integrated Gallium Nitride-Based Point of Load Module Design," IEEE Trans. Power Electron., vol. 28, no. 9, Sept. 2013, pp. 4216-4226. https://doi.org/10.1109/TPEL.2012.2235859
- Z. Liu et al., "Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT," IEEE Trans. Power Electron., vol. 29, no. 4, Apr. 2014, pp. 1977-1985. https://doi.org/10.1109/TPEL.2013.2264941
- Y. Ren et al., "Analytical Loss Model of Power MOSFET," IEEE Trans. Power Electron., vol. 21, no. 2, Mar. 2006, pp. 310-319. https://doi.org/10.1109/TPEL.2005.869743
- B. Yang and J. Zhang, "Effect and Utilization of Common Source Inductance in Synchronous Rectification," IEEE Appl. Power Electron. Conf. Exposition, Mar. 6-10, 2005, pp. 1407-1411.
- W. Saito et al., "Recessed-Gate Structure Approach toward Normally off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications," IEEE Trans. Electron Devices, vol. 53, no. 2, Feb. 2006, pp. 356-362. https://doi.org/10.1109/TED.2005.862708
- Z. Chen, "Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices," M.S. thesis, Dept. of Elect. Eng., Virginia Tech., Blacksburg, USA, 2009.
피인용 문헌
- Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET vol.38, pp.4, 2016, https://doi.org/10.4218/etrij.16.0015.0040
- Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications vol.71, pp.6, 2017, https://doi.org/10.3938/jkps.71.365
- Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems vol.39, pp.1, 2016, https://doi.org/10.4218/etrij.17.0116.0173
- Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss vol.39, pp.6, 2016, https://doi.org/10.4218/etrij.17.0117.0113
- Theoretical and experimental analysis of a venting clip to reduce stray inductance in high‐power conversion applications vol.43, pp.6, 2016, https://doi.org/10.4218/etrij.2021-0024