Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and Ferroelectric Properties of PZT Thin Films Deposited on SrRuO3 Electrode Films

SrRuO3 전극 박막 위에 증착된 PZT 박막의 구조 및 강유전 특성

  • Lee, Myung Bok (Department of Industrial Technology Management, Gwangju University)
  • 이명복 (광주대학교 산업기술경영학부)
  • Received : 2016.08.04
  • Accepted : 2016.08.24
  • Published : 2016.10.01
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Abstract

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

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References

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