DOI QR코드

DOI QR Code

Effect of Channel Length on Electrical Characteristics of a Bendable a-Si:H TFTs

밴더블 a-Si:H 박막트랜지스터의 전기적 특성에 미치는 채널 길이의 영향

  • Oh, Hyungon (Dept. of Electrical Engineering, Korea University) ;
  • Cho, Kyoungah (Dept. of Electrical Engineering, Korea University) ;
  • Kim, Sangsig (Dept. of Electrical Engineering, Korea University)
  • Published : 2016.09.30

Abstract

In this study, we investigate the influence of channel length of bendable a-Si:H thin film transistors (TFTs) on their electrical characteristics as a function of bending strain. Under a tensile strain of 1.69%, $8{\mu}m$-channel-length TFT has the threshold voltage shift up to 5.25 V, while $100{\mu}m$-channel-length TFT operates stably.

본 연구에서는 8와 $100{\mu}m$의 채널 길이를 가지는 밴더블 a-Si:H 박막 트랜지스터를 제작하고, 밴딩 스트레인에 따른 전기적 특성변화를 측정하였다. 1.69%의 밴딩 스트레인에서 $8{\mu}m$ 채널 길이를 가지는 박막트랜지스터는 문턱 전압이 5.25 V까지 이동하였으나 $100{\mu}m$ 채널 길이를 가지는 박막트랜지스터는 전기적 특성 변화 없이 안정적으로 동작하였다.

Keywords

References

  1. R. Amalraj, S. Sambandan, "Influence of curvature on the device physics of thin film transistors on flexible substrates," J. Appl. Phys. 116, 164507, 2014. https://doi.org/10.1063/1.4900440
  2. K. D. Harris. A. L. Elias, H. J. Chung, "Flexible electronics under strain: a review of mechanical characterization and durability enhancement strategies," J. Mater. Sci, 51, 2771, 2016. https://doi.org/10.1007/s10853-015-9643-3
  3. J. Yun, K. Cho, S. Kim, "Improved Electrical Characteristics of HgSe Nanoparticle-based Thin Film Transistors by Thermal Annealing," j.inst.Korean.electr.electron.eng 14, 3, 194, 2010.
  4. B. J. Yu, H. M. Cho, "A Design of PLL for 6 Gbps Transmitter in Display Interface Application," j.inst.Korean.electr.electron.eng 17, 1, 16, 2013.
  5. H. Gleskova, I. C. Cheng, S. Wagner, J. C. Sturm, Z. Suo, "Mechanics of thin-film transistors and solar cells on flexible substrates," Solar Energy 80, 687, 2006. https://doi.org/10.1016/j.solener.2005.10.010
  6. Z. Suo, E. Y. Ma, H. Gleskova, S. Wagner, "Mechanics of rollable and foldable film-on-foil electronics," Appl. Phys. Lett. 74, 8, 1999.
  7. K. Fukuda, K. Hikichi1, T. Sekine, Y. Takeda, T. Minamiki, D. Kumaki, "Strain sensitivity and durability in p-type and n-type organic thin-film transistors with printed silver electrodes," Sci. Rep. 3, 2048, 2013. https://doi.org/10.1038/srep02048
  8. M. H. Lee, B. F. Hsieh, S. T. Chang, "Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending," Thin Solid Films, 528, 82, 2013. https://doi.org/10.1016/j.tsf.2012.10.097