Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Effect of Channel Length on Electrical Characteristics of a Bendable a-Si:H TFTs

밴더블 a-Si:H 박막트랜지스터의 전기적 특성에 미치는 채널 길이의 영향

  • Oh, Hyungon (Dept. of Electrical Engineering, Korea University) ;
  • Cho, Kyoungah (Dept. of Electrical Engineering, Korea University) ;
  • Kim, Sangsig (Dept. of Electrical Engineering, Korea University)
  • Published : 2016.09.30
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Abstract

In this study, we investigate the influence of channel length of bendable a-Si:H thin film transistors (TFTs) on their electrical characteristics as a function of bending strain. Under a tensile strain of 1.69%, $8{\mu}m$-channel-length TFT has the threshold voltage shift up to 5.25 V, while $100{\mu}m$-channel-length TFT operates stably.

본 연구에서는 8와 $100{\mu}m$의 채널 길이를 가지는 밴더블 a-Si:H 박막 트랜지스터를 제작하고, 밴딩 스트레인에 따른 전기적 특성변화를 측정하였다. 1.69%의 밴딩 스트레인에서 $8{\mu}m$ 채널 길이를 가지는 박막트랜지스터는 문턱 전압이 5.25 V까지 이동하였으나 $100{\mu}m$ 채널 길이를 가지는 박막트랜지스터는 전기적 특성 변화 없이 안정적으로 동작하였다.

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References

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