Abstract
The conditions for chemical polishing and etching technique were investigated to reveal surface defects in RE : YAG ($RE=Nd^{3+},\;Er^{3+},\;Yb^{3+}$) single crystals grown by Czochralski method. The optimal condition for chemical polishing was in 85 % $H_3PO_4$ solution at $330^{\circ}C$ for 30 minutes with a specimen fixed in the vertical direction. In addition, the optimal condition for chemical etching was in 85 % $H_3PO_4$ solution at $260^{\circ}C$ for 1 hour, and $70{\sim}80{\mu}m$ sized triangular etch pits were observed on (111) face. As a result of defect density analysis, $1.9{\times}10^3/cm^2$ for Nd(1 %) : YAG, $4.3{\times}10^2/cm^2$ for Er(7.3 %) : YAG, and $5.1{\times}10^2/cm^2$ for Yb(15 %) : YAG were measured.
Czochralski 법으로 성장한 RE : YAG ($RE=Nd^{3+}\;,Er^{3+}\;,Yb^{3+}$) 단결정의 표면 결함을 측정하는 chemical polishing 및 etching 조건에 대하여 조사하였다. 최적의 chemical polishing 조건은 시편을 수직 방향으로 고정하고 85 % $H_3PO_4$ 용액에서 $330^{\circ}C$, 30분 동안 진행한 것이었다. 또한 최적의 chemical etching 조건은 85 % $H_3PO_4$ 용액에서 $260^{\circ}C$, 1시간 동안 진행한 것이었고, (111) 면에 $70~80{\mu}m$ 크기의 삼각형 etch pit들이 관찰되었다. 결함 밀도 분석 결과, Nd(1 %) : YAG는 $1.9{\times}10^3$개/$cm^2$, Er(7.3 %) : YAG는 $4.3{\times}10^2$개/$cm^2$, Yb(15 %) : YAG는 $5.1{\times}10^2$개/$cm^2$로 측정되었다.
