JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A 7.6 mW 2 Gb/s Proximity Transmitter for Smartphone-Mirrored Display Applications

  • Liu, Dang (Institute of Microelectronics Tsinghua University Beijing) ;
  • Liu, Xiaofeng (Institute of Microelectronics Tsinghua University Beijing) ;
  • Rhee, Woogeun (Institute of Microelectronics Tsinghua University Beijing) ;
  • Wang, Zhihua (Institute of Microelectronics Tsinghua University Beijing)
  • Received : 2016.02.29
  • Accepted : 2016.05.02
  • Published : 2016.08.30
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Abstract

This paper describes a high data rate proximity transmitter design for high resolution smartphone-mirrored display applications. A 2 Gb/s transmitter is designed with a low transmission power of -70 dBm/MHz and a wide bandwidth of nearly 3 GHz. A digital pre-correction method is employed in the transmitter to mitigate the inter-symbol interference problem. A carrier-based digital pulse shaping and a reconfigurable digital envelope generation methods are employed for robust operation by utilizing 20 phases from a 2 GHz phase-locked loop. A 6.5-9.5 GHz transmitter implemented in 65 nm CMOS achieves the maximum data rate of 2 Gb/s, consuming only 7.6 mW from a 1 V supply.

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References

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