Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effect of Barrier Layer on Thin-film Silicon Solar Cell Using Graphite Substrates

탄소 기판을 이용한 박막 실리콘 태양전지의 배리어 층 효과

  • Cho, Young Joon (Graduate School of Energy Science and Technology, Chungnam National University) ;
  • Lee, Dong Won (New Power Plasma) ;
  • Cho, Jun Sik (Photovoltaic Research, Korea Institute of Energy Research) ;
  • Chang, Hyo Sik (Graduate School of Energy Science and Technology, Chungnam National University)
  • 조영준 (충남대학교 에너지과학기술대학원) ;
  • 이동원 ((주)뉴파워프라즈마) ;
  • 조준식 (한국에너지기술연구원 태양광연구실) ;
  • 장효식 (충남대학교 에너지과학기술대학원)
  • Received : 2016.04.28
  • Accepted : 2016.07.08
  • Published : 2016.08.01
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Abstract

We have investigated the characteristics of amorphous silicon (a-Si) thin-film solar cell by inserting barrier layer. The conversion efficiency of a-Si thin-film solar cells on graphite substrate shows nearly zero because of the surface roughness of the graphite substrate. To enhance the performance of solar cells, the surface morphology of the back side were modified by changing the barrier layer on graphite. The surface roughness of graphite substrate with the barrier layer grown by plasma enhanced chemical vapor deposition (PECVD) reduced from ~2 um to ~75 nm. In this study, the combination of the barrier layer on graphite substrate is important to increase solar cell efficiency. We achieved ~ 7.8% cell efficiency for an a-Si thin-film solar cell on graphite substrate with SiNx/SiOx stack barrier layer.

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References

  1. W. Xu, S. Choi, and M. G. Allen, 23rd IEEE Micro Electro Mechanical System (MEMS) (Hong Kong, 2010) p. 1187.
  2. K. J. Maung, H. T. Hahn, and Y. S. Ju, Solar Energy, 84, 450 (2010). [DOI: http://dx.doirg/10.1016/j.solener.2010.01.002]
  3. X. Li. Z. Lv, and H. Zhu, Adv. Mater., 27, 6549 (2015). [DOI: http://dx.doirg/10.1002/adma.201502999]
  4. J. H. Lee, S. R. Won, J. P. Shim, G. S. Park, H. J. Sun, and H. K. Lee, Trans. Electr. Electron. Mater., 15, 193 (2014). [DOI: http://dx.doirg/10.4313/TEEM.2014.15.4.193]
  5. C. H. Doh, K. Y. Jeong, B. S. Jin, H. S. Kim, S. I. Moon, M. S. Yun, I. G. Choi, C. W. Park, and K. J. Lee, J. Korean Inst. Electr. Electron. Mater. Eng., 19, 636 (2006).
  6. D. E. Carlson and C. R. Wronski, Appl. Phy. Lett., 28, 671 (1976). [DOI: http://dx.doirg/10.1063/1.88617]