Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Contact Properties by Varying the Firing Condition of AgAl Electrode for n-type Crystalline Silicon Solar Cell

AgAl 전극 고온 소성 조건 가변에 따른 N-형 결정질 실리콘 태양전지의 접촉 특성 분석

  • Oh, Dong-Hyun (Department of Energy System, Sungkyunkwan University) ;
  • Chung, Sung-Youn (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jeon, Min-Han (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kang, Ji-Woon (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Shim, Gyeong-Bae (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Cheol-Min (Department of Energy Science, Sungkyunkwan University) ;
  • Kim, Hyun-Hoo (Department of Display Engineering, Doowon Technical University) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University)
  • 오동현 (성균관대학교 에너지시스템공학과) ;
  • 정성윤 (성균관대학교 정보통신대학) ;
  • 전민한 (성균관대학교 정보통신대학) ;
  • 강지윤 (성균관대학교 정보통신대학) ;
  • 심경배 (성균관대학교 정보통신대학) ;
  • 박철민 (성균관대학교 에너지과학과) ;
  • 김현후 (두원공과대학교 디스플레이공학과) ;
  • 이준신 (성균관대학교 정보통신대학)
  • Received : 2016.07.05
  • Accepted : 2016.07.24
  • Published : 2016.08.01
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Abstract

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

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