참고문헌
- W. Lee, H. Yow and T. Tou, "Characterization of crystal-originated particles in silicon nitride doped, CZ-Grown silicon wafers", J. Electrochem. Soc. 153 (2006) G248. https://doi.org/10.1149/1.2163787
- K. Matsukawa, N. Hattori, S. Maegawa, K. Shirai and H. Yoshida, "Gettering mechanism of transition metals in silicon calculated from first principles", Physica B 376-377 (2006) 224. https://doi.org/10.1016/j.physb.2005.12.059
- H. Tsuya, "Present status and prospect of Si wafers for ultra large scale integration", Jpn. J. Appl. Phys. 43 (2004) 4055. https://doi.org/10.1143/JJAP.43.4055
-
K. Honda, T. Nakanishi, A. Ohsawa and N. Toyokura, "Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the
$SiO_2$ -Si interface", J. Appl. Phys. 62 (1987) 1960. https://doi.org/10.1063/1.339534 - H. Wendt, H. Cerva, V. Lehmann and W. Pamler, "Impact of copper contamination on the quality of silicon oxides", J. Appl. Phys. 65 (1989) 2402. https://doi.org/10.1063/1.342808
- H. Goto, L. Pan, M. Tanaka and K. Kashima, "Intrinsic gettering in nitrogen-doped and hydrogen-annealed Czochralski-grown silicon wafers", Jpn. J. Appl. Phys. 40 (2001) 3944. https://doi.org/10.1143/JJAP.40.3944
- D. Yang, J. Chen, X. Ma and D. Que, "Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits", J. Cryst. Growth 311 (2009) 837. https://doi.org/10.1016/j.jcrysgro.2008.09.194
- T. Tan, E. Gardner and W. Tice, "Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si", Appl. Phys. Lett. 30 (1977) 175. https://doi.org/10.1063/1.89340
- R. Falster and W. Bergholz, "The gettering of transition metals by oxygen-related defects in silicon", J. Electrochem. Soc. 137 (1990) 1548. https://doi.org/10.1149/1.2086709
- B. Park, G. Seo and G. Kim, "Nitrogen-doping effect in a fast-pulled CZ-Si single crystal", J. Cryst. Growth 222 (2001) 74. https://doi.org/10.1016/S0022-0248(00)00915-5
- K. Aihara, H. Takeno, Y. Hayamizeu, M. Tamatsuka and T. Masui, "Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping", J. Appl. Phys. 88 (2000) 3705. https://doi.org/10.1063/1.1288157
- V. Voronkov and R. Falster, "Nucleation of oxide precipitates in vacancy-containing silicon", J. Appl. Phys. 91 (2002) 5802. https://doi.org/10.1063/1.1467607
- R. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Ohlmo, G. Ferrero, P. Pichler and M. Jacob, "Vacancy-assisted oxygen precipitation phenomena in Si", Solid State Phenom. 57-58 (1997) 129. https://doi.org/10.4028/www.scientific.net/SSP.57-58.129
- M. Jacob, P. Pichler, R. Ryssel, R. Falster, M. Cornara, D. Gambaro, M. Olmo and M. Pagani, "Observation of vacancy enhancement during rapid thermal annealing in nitrogen", Solid State Phenom. 57-58 (1997) 349. https://doi.org/10.4028/www.scientific.net/SSP.57-58.349
- V. Voronkov, R. Falster, T. Kim, S. Park and T. Torack, "Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing", J. Appl. Phys. 114 (2013) 043520. https://doi.org/10.1063/1.4817022
- D. Zemke, P. Gerlach, W. Zulehner and K. Jacobs, "Investigations on the correlation between growth rate and gate oxide integrity of Czochralski-grown silicon", J. Gryst. Growth 139 (1994) 37. https://doi.org/10.1016/0022-0248(94)90026-4
- G. Graf, U. Lambert, M. Brohl, A. Ehlert, R. Wahlich and P. Wagner, "Improvement of Czochralski silicon-wafers by high-temperature annealing", J. Electrochem. Soc. 142 (1995) 3189. https://doi.org/10.1149/1.2048711
- J. Park and G. Rozgonyi, "DRAM wafer qualification issues: oxide integrity vs. D-defects, oxygen precipitates and high temperature annealing", Solid State Phenom. 47-48 (1996) 327. https://doi.org/10.4028/www.scientific.net/SSP.47-48.327
- J. Vanhellemont, E. Simoen, A. Kanlava, M. Libezny and C. Claeys, "I mpact of oxygen related extended defects on silicon diode characteristics", J. Appl. Phys. 77 (1995) 5667.
- G. Kissinger, J. Vanhellemont, E. Simoen, C. Claeys and H. Richer, "In vestigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography", Mater. Sci. Eng. B36 (1996) 225.
- H. Huff, H. Shaake, J. Robinson, S. Baber and D. Wong, "Some observations on oxygen precipitation/gettering in device processed Czochralski silicon", J. Electrochem. Soc. 130 (1983) 1551. https://doi.org/10.1149/1.2120032
- G. Kissinger, T. Grabolla, G. Morgenstern, H. Richter, D. Graf, J. Vanhellemont, U. Lambert and W. Ammon, "Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing", J. Electorhem. Soc. 146 (1999) 1971. https://doi.org/10.1149/1.1391875