한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제29권6호
  • /
  • Pages.327-331
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  • 2016
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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As2Se3 기반 Resistive Random Access Memory의 채널 직선화를 통한 신뢰성 향상

Improving the Reliability by Straight Channel of As2Se3-based Resistive Random Access Memory

  • 남기현 (광운대학교 전자재료공학과) ;
  • 김충혁 (광운대학교 인제니움학부)
  • Nam, Ki-Hyun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Chung-Hyeok (Ingenium college of Liberal Arts, Kwangwoon University)
  • 투고 : 2016.03.22
  • 심사 : 2016.05.18
  • 발행 : 2016.06.01
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초록

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

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참고문헌

  1. L. Chen, Y. Xu, Q. Q. Sun, P. Zhou, P. F. Wang, S. J. Ding, and D. W. Zhang, , 31, 1296 (2010).
  2. J. Lee, E. M. Bourim, W. Lee, J. Park, M. Jo, S. Jung, J. Shin, and H. Hwang, Phys. Lett., 97, 172105 (2010). [DOI: http://dx.doi.org/10.1063/1.3491803]
  3. Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, A. Beck, and S. J. Wind, Appl. Phys. Lett., 78, 3738 (2001). [DOI: http://dx.doi.org/10.1063/1.1377617]
  4. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett., 76, 2749 (2000). [DOI: http://dx.doi.org/10.1063/1.126464]
  5. S. Lai, IEDM Tech. Dig. (Washington, USA, 2003)
  6. E. Garcia-Garcia, A. Mendoza-Galvan, Y. Vorobiev, E. Morales-Sanchez, J. Gonzalez-Hernandez, G. Martinez, and B. S. Chao, J. Vac. Sci. Technol., 17, 1805 (1999). [DOI: http://dx.doi.org/10.1116/1.581894]
  7. J. I. Park, J. T. Lee, C. H. Yeo, Y. J. Lee, J. B. Kim, and H. B. Chung, Jpn. J. Appl. Phys., 42, 5090 (2003). [DOI: http://dx.doi.org/10.1143/JJAP.42.5090]
  8. J. B. Yeo, S. D. Yun, T. W. Kim, and H. Y. Lee, J. Non-Crys. Solids, 354, 5343 (2008). [DOI: http://dx.doi.org/10.1016/j.jnoncrysol.2008.09.028]