References
- H.-S.P. Wong, IBM Journal of Research and Development 46(2-3), 133 (2002). https://doi.org/10.1147/rd.462.0133
- Mark Bohr, Intel Developer Forum, (2014).
- P. Packan, S. Akbar, M. Armstrong, D. Bergstrom, M. Brazier, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, et al., IEDM, (2009).
- K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 306, 666 (2004). https://doi.org/10.1126/science.1102896
- N. Planes, O. Weber, V. Barral, S. Haendler, D. Noblet, D. Croain, M. Bocat, P.-O. Sassoulas, X. Federspiel, A. Cros, et al., VLSI, (2012).
- A.K. Geim, K.S. Novoselov, Nature materials 6, 183 (2007). https://doi.org/10.1038/nmat1849
- K.I. Bolotin, K.J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H.L. Stormer, Solid State Communications 146, 351 (2008). https://doi.org/10.1016/j.ssc.2008.02.024
- S. Takagi, A. Toriumi, M. Iwase, H. Tango, IEEE Trans. Electron Devices 41(12), 2357 (1994). https://doi.org/10.1109/16.337449
- X. Li, C.W. Magnuson, A. Venugopal, R.M. Tromp, J.B. Hannon, E.M. Vogel, L. Colombo, R.S. Ruoff, J. Am. Chem. Soc. 133, 2816 (2011). https://doi.org/10.1021/ja109793s
- S. Bae, H. Kim, Y. Lee, X. Xu, J. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. Kim, Y. Song, Y. Kim, K. Kim, B. Ozyilmaz, J. Ahn, B. Hong, S. Iijima, Nature nanotechnology 20, 574 (2010).
- B. Fallahazad, K. Lee, G. Lian, S. Kim, C.M. Corbet, D.A. Ferrer, L. Colombo, E. Tutuc, Appl. Phys. Lett. 100, 093112 (2012). https://doi.org/10.1063/1.3689785
- F. Speck, M. Ostler, J. Rohrl, K.V. Emtsev, M. Hundhausen, L. Ley, and T. Seyller, Phys. Status Solidi C 7, 398 (2010). https://doi.org/10.1002/pssc.200982496
- Y. Xuan, Y.Q. Wu, T. Shen, M. Qi, M.A. Capano, J.A. Cooper, and P.D. Ye, Appl. Phys. Lett. 92, 013101 (2008). https://doi.org/10.1063/1.2828338
- B. Lee, S.-Y. Park, H.-C. Kim, K. Cho, E.M. Vogel, M.J. Kim, R.M. Wallace, and J. Kim, Appl. Phys. Lett. 92, 203102 (2008). https://doi.org/10.1063/1.2928228
- YG. Lee, CG. Kang, U. Jung, J. Kim, H. Hwang, H. Chung, S. Seo, R. Choi, BH. Lee, Appl. Phys. Lett. 98, 183508 (2011). https://doi.org/10.1063/1.3588033
- A. A.Sagade, D. Neumaier, D. Schall, M. Otto, A. Pesquera, A. Centeno, A. ZurutuzaElorza, and H. Kurz, Nanoscale 7, 3558 (2015). https://doi.org/10.1039/C4NR07457B
- H. Wang, Y. Wu, C. Cong, J. Shang, and T. Yu, ACS Nano 4, 7221 (2010). https://doi.org/10.1021/nn101950n
- A. Veligura, P.J. Zomer, I.J. Vera-Marun, C. Jozsa, P.I. Gordiichuk, and B.J. van Wees, J. Appl. Phys. 110, 113708 (2011). https://doi.org/10.1063/1.3665196
- G. Kalon, Y.J. Shin, V.G. Truong, A. Kalitsov, and H. Yang, Appl. Phys. Lett. 99, 083109 (2011). https://doi.org/10.1063/1.3626854
- J. Mohrmann, K. Watanabe, T. Taniguchi, and R. Danneau, Nanotechnology 26, 015202 (2014).
- CG.Kang, YG.Lee, SK.Lee, E.Park, C.Cho, S.Lim, H.Hwang, BH.Lee, Carbon 53, 182 (2013). https://doi.org/10.1016/j.carbon.2012.10.046
- H. Sojoudi, J. Baltazar, C. Henderson, and S. Graham, J. Vac. Sci. Technol. B 30, 041213 (2012). https://doi.org/10.1116/1.4731472
- J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C.W. Magnuson, R.S. Ruoff, L. Colombo, R.M. Wallace, and E.M. Vogel, (2012).
- F. Schedin, A.K. Geim, S.V. Morozov, E.W. Hill, P. Blake, M.I. Katsnelson, and K.S. Novoselov, Nat. Mater. 6, 652 (2007). https://doi.org/10.1038/nmat1967
- Y. Yang, K. Brenner, and R. Murali, Carbon 50, 1727 (2012). https://doi.org/10.1016/j.carbon.2011.12.008
- M. Drapeko, Appl. Phys. Lett. 104, 221604 (2014). https://doi.org/10.1063/1.4881841
- C.W. Jang, J.H. Kim, J.M. Kim, D.H. Shin, S. Kim, and S.-H. Choi, Nanotechnology 24, 405301 (2013). https://doi.org/10.1088/0957-4484/24/40/405301
- C. Hummel, F. Schwierz, A. Hanisch, and J. Pezoldt, Phys. Status Solidi B 247, 903 (2010).
- S. Ryu, L. Liu, S. Berciaud, Y.-J. Yu, H. Liu, P. Kim, G.W. Flynn, and L.E. Brus, Nano Lett. 10, 4944 (2010). https://doi.org/10.1021/nl1029607
- S. Ryu, L. Liu, S. Berciaud, Y.-J. Yu, H. Liu, P. Kim, G.W. Flynn, L.E. Brus, Nano Lett. 10, 4944 (2010). https://doi.org/10.1021/nl1029607
- I. Jung, D. Dikin, S. Park, W. Cai, S.L. Mielke, R.S. Ruoff, J. Phys. Chem. C 112, 20264 (2008). https://doi.org/10.1021/jp807525d
- J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C.W. Magnuson, R.S. Ruoff, L. Colombo, R.M. Wallace, and E.M. Vogel, ACS Nano 6, 3224 (2012). https://doi.org/10.1021/nn300107f
- BH. Lee, YG. Lee, U. Jung, Y. Kim, H. Hwang, J. Kim, CG. Kang, Carbon Lett. 13, 23 (2012). https://doi.org/10.5714/CL.2012.13.1.023
- Y.H. Zhang, H.R. Zhang, B. Wang, Z.Y. Chen, Y.Q. Zhang, B. Wang, Y.P. Sui, B. Zhu, C.M. Tang, X.L. li, X.M. Xie, G.H. Yu, Z. Jin, X.Y. Liu, Appl. Phys. Lett. 104, 143110 (2014). https://doi.org/10.1063/1.4871000
- X. Chen, Z. Liu, C. Zheng, F. Xign, X. Yan, Y. Chen, J. Tian, Carbon 56, 271 (2013). https://doi.org/10.1016/j.carbon.2013.01.011
- C. Cho, YG. Lee, U. Jung, CG. Kang, S. Lim, H. Hwang, H. Choi, BH. Lee, Appl. Phys. Lett. 103, 083110 (2013). https://doi.org/10.1063/1.4818770
- M. Jang, T.Q. Trung, J.-H. Jung, B.-Y. Kim, and N.-E. Lee, Phys. Chem. Chem. Phys. 16, 4098 (2014). https://doi.org/10.1039/c3cp53900h
- H.J. Jeong, H.Y. Kim, S.Y. Jeong, J.T. Han, K.-J. Baeg, J.Y. Hwang, and G.-W. Lee, Carbon 66, 612 (2014). https://doi.org/10.1016/j.carbon.2013.09.050
- K. Kumar, Y.-S. Kim, and E.-H. Yang, Carbon 65, 35 (2013). https://doi.org/10.1016/j.carbon.2013.07.088
- C.-J. Shih, G.L.C. Paulus, Q.H. Wang, Z. Jin, D. Blankschtein, and M.S. Strano, Langmuir 28, 8579 (2012). https://doi.org/10.1021/la3008816
- X. Liang, B.A. Sperling, I. Calizo, G. Cheng, C.A. Hacker, Q. Zhang, Y. Obeng, K. Yan, H. Peng, Q. Li, X. Zhu, H. Yuan, A.R. Hight Walker, Z. Liu, L. Peng, and C.A. Richter, ACS Nano 5, 9144 (2011). https://doi.org/10.1021/nn203377t
- J.W. Suk, W.H. Lee, J. Lee, H. Chou, R.D. Piner, Y. Hao, D. Akinwande, and R.S. Ruoff, Nano Lett. 13, 1462 (2013). https://doi.org/10.1021/nl304420b
- M.J. Hollander, M. Labella, Z.R. Hughes, M. Zhu, K.A. Trumbull, R. Cavalero, D.W. Snyder, X. Wang E. Hwang, S. Datta, J.A. Robinson, Nano Letters 11, 3601 (2011). https://doi.org/10.1021/nl201358y
- R. Rammula, L. Aarik, A. Kasikov, J. Kozlova, T. Kahro, L. Matisen, A. Niilisk, H. Alles, and J. Aarik, IOP Conf. Ser. Mater. Sci. Eng. 49, 012014 (2013).
- Y. Zhang, Z. Qiu, X. Cheng, H. Xie, H. Wang, X. Xie, Y. Yu, and R. Liu, J. Phys. Appl. Phys. 47, 055106 (2014). https://doi.org/10.1088/0022-3727/47/5/055106
- V. Wheeler, N. Garces, L. Nyakiti, R. Myers-Ward, G. Jernigan, J. Culbertson, C. Eddy Jr., D. Gaskill, Carbon 50, 2307 (2012). https://doi.org/10.1016/j.carbon.2012.01.050
- YG. Lee, CG. Kang, C. Cho, Y. Kim, H. Hwang, BH. Lee, Carbon 60, 453 (2013). https://doi.org/10.1016/j.carbon.2013.04.060
- S. Russo, M.F. Craciun, M. Yamamoto, A.F. Morpurgo, S. Tarucha, Physica E 42, 677 (2010). https://doi.org/10.1016/j.physe.2009.11.080
- K. Nagashio, T. Nishimura, K. Kita, A. Toriumi, Appl. Phys. Lett. 97, 143514 (2010). https://doi.org/10.1063/1.3491804
- C. Cho, SK. Lee, JW. Noh, W. Park, S. Lee, YG. Lee, H. Hwang, CG. Kang, M. Ham, BH. Lee, Appl. Phys. Lett. 106, 213107 (2015). https://doi.org/10.1063/1.4921797
- SM. Song, JK. Park, OJ. Sul, BJ. Cho, Nano Letters 12, 3887 (2012). https://doi.org/10.1021/nl300266p
- J.W. Suk, A. Kitt, C.W. Magnuson, Y. Hao, S. Ahmed, J. An, A.K. Swan, B.B. Goldberg, and R.S. Ruoff, ACS Nano 5, 6916 (2011). https://doi.org/10.1021/nn201207c
- Y. Wang, Y. Zheng, X. Xu, E. Dubuisson, Q. Bao, J. Lu, and K.P. Loh, ACS Nano 5, 9927 (2011). https://doi.org/10.1021/nn203700w
- L. Gao, W. Ren, H. Xu, L. Jin, Z. Wang, T. Ma, L.-P. Ma, Z. Zhang, Q. Fu, L.-M. Peng, X. Bao, and H.-M. Cheng, Nat. Commun. 3, 699 (2012). https://doi.org/10.1038/ncomms1702
- X.-D. Chen, Z.-B. Liu, W.-S. Jiang, X.-Q. Yan, F. Xing, P. Wang, Y. Chen, and J.-G. Tian, Sci. Rep. 3, (2013).
- M. Kim, H. An, W.-J. Lee, and J. Jung, Electron. Mater. Lett. 9, 517 (2013). https://doi.org/10.1007/s13391-013-0038-9
- J. Lee, Y. Kim, H.-J. Shin, C. Lee, D. Lee, C.-Y. Moon, J. Lim, and S.C. Jun, Appl. Phys. Lett. 103, 103104 (2013). https://doi.org/10.1063/1.4819740
- Y. Lee, S. Bae, H. Jang, S. Jang, S.-E. Zhu, S.H. Sim, Y.I. Song, B.H. Hong, and J.-H. Ahn, Nano Lett. 10, 490 (2010). https://doi.org/10.1021/nl903272n
- G.H. HAN, H.-J. SHIN, E.S. KIM, S.J. CHAE, J.-Y. CHOI, and Y.H. LEE, Nano 06, 59 (2011). https://doi.org/10.1142/S1793292011002342
- J. Kang, S. Hwang, J.H. Kim, M.H. Kim, J. Ryu, S.J. Seo, B.H. Hong, M.K. Kim, and J.-B. Choi, ACS Nano 6, 5360 (2012). https://doi.org/10.1021/nn301207d
- C.J.L. de la Rosa, J. Sun, N. Lindvall, M.T. Cole, Y. Nam, M. Loffler, E. Olsson, K.B.K. Teo, and A. Yurgens, Appl. Phys. Lett. 102, 022101 (2013). https://doi.org/10.1063/1.4775583
- W.C. Shin, T. Yoon, J.H. Mun, T.Y. Kim, S.-Y. Choi, T.-S. Kim, and B.J. Cho, Appl. Phys. Lett. 103, 243504 (2013). https://doi.org/10.1063/1.4846317
- J. Song, F.-Y. Kam, R.-Q. Png, W.-L. Seah, J.-M. Zhuo, G.-K. Lim, P.K.H. Ho, and L.-L. Chua, Nat. Nanotechnol. 8, 356 (2013). https://doi.org/10.1038/nnano.2013.63
- D.-Y. Wang, I.-S. Huang, P.-H. Ho, S.-S. Li, Y.-C. Yeh, D.-W. Wang, W.-L. Chen, Y.-Y. Lee, Y.-M. Chang, C.-C. Chen, C.-T. Liang, and C.-W. Chen, Adv. Mater. 25, 4521 (2013). https://doi.org/10.1002/adma.201301152
- S. Cha, M. Cha, S. Lee, J.H. Kang, and C. Kim, Sci. Rep. 5, (2015).
- C. Vilani, E.C. Romani, D.G. Larrude, G.M. Barbosa, and F.L. Freire, Appl. Surf. Sci. 356, 1300 (2015). https://doi.org/10.1016/j.apsusc.2015.08.256
- S. Lee, SK. Lee, CG. Kang, C. Cho, YG. Lee, U. Jung, BH. Lee, Carbon 93, 286 (2015). https://doi.org/10.1016/j.carbon.2015.05.038
- U. Gosele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, K. Scheerschmidt, Appl. Phys. Lett. 67, 3614 (1995). https://doi.org/10.1063/1.115335
- YJ. Kim, YG. Lee, U. Jung, S. Lee, SK. Lee, BH. Lee, Nanoscale 7, 4013 (2015). https://doi.org/10.1039/C4NR06397J
- A timeline of Semiconductors in Computers, http://www.computerhistory.org/siloconengine/