The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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Study on the Trap Parameters according to the Nitridation Conditions of the Oxide Films

산화막의 질화 조건에 따른 트랩 파라미터에 관한 연구

  • 윤운하 (재료연구소 소재실용화연구실) ;
  • 강성준 (전남대학교 전기및반도체공학전공) ;
  • 정양희 (전남대학교 전기및반도체공학과)
  • Received : 2016.04.06
  • Accepted : 2016.05.24
  • Published : 2016.05.31
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Abstract

In this paper, the MIS(: Metal-Insulator-Semiconductor) Capacitor with the nitrided-oxide by RTP are fabricated to investigate the carrier trap parameters due to avalanche electron injection. Two times turn-around phenomenon of the flatband voltage shift generated by the avalanche injection are observed. This shows that electron trapping occurs in the oxide film at the first stage. As the electron injection increases, the first turn-around occures due to a positive charge in the oxide layer. After further injection, the curves turns around once again by electron captured. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitting with experimental data in order to determine trap parameter of nitrided-oxide.

본 논문은 RTP법으로 산화막을 질화시킨 질화산화막으로 MIS 커패시터를 제작하여 avalanche 주입에 따른 캐리어 트랩 특성을 조사하였다. avalanche 주입에 의한 flatband 전압 변화는 두 번의 turn-around가 관찰되었는데 이는 처음 산화막에서 전자 트래핑이 있어나고, 전하 주입에 따라 홀 트래핑에 의한 turn-around 후 다시 전자 트래핑이 일어나는 것을 관찰하였다. 질화 산화막의 캐리어 트랩 파라미터를 결정하기 위하여 실험 결과를 기초로 종류가 다른 여러 트랩을 갖는 계에 대한 캐리어 트래핑을 비교한 결과 실험값과 일치함을 확인하였다.

Keywords

References

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