Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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A study on the SiC single crystal growth conditions by the resistance heating method

저항가열 방식에 의한 SiC 단결정 성장 조건에 관한 연구

  • Kang, Seung-Min (International Design Convergence Graduate School, Hanseo University)
  • 강승민 (한서대학교 국제디자인융합전문대학원)
  • Received : 2016.04.06
  • Accepted : 2016.04.13
  • Published : 2016.04.30
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Abstract

6H-SiC single crystals were grown by using a resistance heating system. It was recognized that the growth behavior was different according to the different growth temperatures. It was revealed that the temperatures at the source feeding and at the crystal growth position had to be controlled independently. In this report, the effect of growth temperature on the SiC crystal growth was discussed.

저항가열 방식으로 제작된 설비를 이용하여 SiC 단결정을 성장하였다. 성장 조건에 따라 결정의 성장 양상이 달랐으며, 원료부의 온도와 결정 성장부의 온도에 따라 각각 온도 설정이 필요함을 알았다. 본 논문에서는 SiC 결정의 성장 온도에 따른 성장 결과에 대하여 고찰해 보았으며, 이에 대한 결과를 보고하고자 한다.

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References

  1. R. Gerhardt, "Properties and applications of silicon carbide" (InTech, Croatia, 2011) p. 361.
  2. S.M. Kang, "Step growth and defects formation on growth interface for SiC sublimation growth", J. Korean Cryst. Growth Cryst. Technol. 9 (1999) 558.
  3. S.M. Kang, "The study on the formation of growth steps in the sublimation growth of SiC single crystals", J. Korean Cryst. Growth Cryst. Technol. 11 (2001) 1.
  4. G.P. Yin and S.M. Kang, "A study on the dependance of crucible dimension on AlN single crystal growth", J. Korean Cryst. Growth Cryst. Technol. 25 (2015) 1. https://doi.org/10.6111/JKCGCT.2015.25.1.001
  5. S.M. Kang, "A study on the crystalline phases of AlN single crystals grown by PVT method", J. Korean Cryst. Growth Cryst. Technol. 24 (2015) 54.