DOI QR코드

DOI QR Code

PMMA-HfOx 유-무기 하이브리드 저항변화 메모리 제작

Fabrication of PMMA-HfOx Organic-Inorganic Hybrid Resistive Switching Memory

  • 백일진 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Baek, Il-Jin (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2016.01.28
  • 심사 : 2016.02.23
  • 발행 : 2016.03.01

초록

In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

키워드

참고문헌

  1. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, and M. Liu, Adv. Mater., 24, 1844 (2012). [DOI: http://dx.doi.org/10.1002/adma.201104104]
  2. S. Kim, H. Moon, D. Gupta, S. Yoo and Y. K. Choi, IEEE Trans. Electron. Dev., 56, 4 (2009). [DOI: http://dx.doi.org/10.1109/TIE.2008.2008757]
  3. C. D. Müller, A. Falcou, N. Reckefuss, M. Rojahn, V. Wiederhirn, P. Rudati, H. Frohne, O. Nuyken, H. Becker, and K. Meerholz, Nature, 421, 829 (2003). [DOI: http://dx.doi.org/10.1038/nature01390]
  4. G. Dennler and N. S. Sariciftci, Proceedings of the IEEE, 93, 1429 (2005). [DOI: http://dx.doi.org/10.1109/JPROC.2005.851491]
  5. G. Darlinski, U. Bottger, and R. Waser, J. Appl. Phys., 97, 093708 (2005). [DOI: http://scitation.aip.org/content/aip/journal/jap/97/9/10.1063/1.1888046]
  6. M. Mizukami, N. Hirohata, T. Iseki, K. Ohtawara, T. Tada, S. Yagyu, T. Abe, T. Suzuki, Y. Fujisaki, Y. Inoue, S. Tokito, and T. Kurita, IEEE Electron Device Lett., 27, 249 (2006). [DOI: http://dx.doi.org/10.1109/LED.2006.870413]
  7. J. Mangalam, S. Agarwal, A. N. Resmi, M. Sundararajan, and K. B. Jinesh, Organic Electronics, 29, 33 (2016). [DOI: http://dx.doi.org/10.1016/j.orgel.2015.11.017]
  8. R. Huang, Y. Cai, Y. Liu, W. Bai, Y. Kuang, and T. Wang, Circuits and Systems, 838 (2014).
  9. Z. Fan, D. Wang, J. G. Lu, X. Mo, C. Lou, Y. Yao, and G. Chen, In Nanotechnology, IEEE-NANO., 2, 588 (2003). [DOI: http://dx.doi.org/10.1109/NANO.2003.1230979]
  10. H. T. Lin, Z. Pei, and Y. J. Chan, Electron Device Letters, IEEE, 28, 569 (2007). [DOI: http://dx.doi.org/10.1109/LED.2007.899668]
  11. D. Basak, S. Karan, and B. Mallik, Solid State Commun. 141, 483 (2007). [DOI: http://dx.doi.org/10.1016/j.ssc.2006.12.014]
  12. P. Wong, H. Y. Lee, S. Yu, Y. S. Chen, Y. Wu, P. S. Chen, B. Lee, F T. Chen, and M. J. Tsai, Proceeding of the IEEE, 100, 1951 (2012). [DOI: http://dx.doi.org/10.1109/JPROC.2012.2190369]
  13. E. J. Yoo, M. Lyu, J. H. Yun, C. J. Kang, Y. J. Choi, and L. Wang, Advanced Materials, 27, 6170 (2015) [DOI: http://dx.doi.org/10.1002/adma.201502889]
  14. H. W. Shin, J. H. Park, H. Y. Chung, K. H. Kim, H. D. Kim, and T. G. Kim, Applied Physics Express, 7, 024202 (2014). [DOI: http://dx.doi.org/10.7567/APEX.7.024202]
  15. I. Hwang, M. J. Lee, G. H. Buh, J. Bae, J. Choi, J. S. Kim, S. Hong, Y. S. Kim, I. S. Byun, S. W. Lee, S. E. Ahn, B. S. Kang, S. O. Kang, B. H. Park, Appl. Phys. Lett. 97, 052106 (2010). [DOI: http://dx.doi.org/10.1063/1.3477953]
  16. H. Jo, J. A. Lim, H .J. Chang and Y. S. Kim, Macromol. Rapid Commun., 34, 355 (2013). [DOI: http://dx.doi.org/10.1002/marc.201200614]
  17. A. Ramadoss, K. Krishnamoorthy and S. J. Kim, Appl. Phy. Exp., 5, 085803 (2012). [DOI: http://dx.doi.org/10.1143/APEX.5.085803]