Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A Study of Characteristic based on Working Pressure of ITO Electrode for Display

디스플레이용 ITO 전극의 동작 압력에 따른 특성 연구

  • Kim, Hae-Mun (Dept. of Materials & Energy Engineering College of IT & Energy, KyungWoon University) ;
  • Park, Hyung-Jun (Dept. of Materials & Energy Engineering College of IT & Energy, KyungWoon University)
  • Received : 2016.11.25
  • Accepted : 2016.12.26
  • Published : 2016.12.31
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Abstract

In this paper, Characteristics of the ITO thin film deposited were analyzed using DC magnetron sputtering in order to investigate the deposition conditions of ITO thin film for transparent electrode. The experiment conditions were atmospheric pressure from 1 to 3[mTorr] with 1 [mTorr] step, bias electric voltage ranged from 260[V] to 330[V] with 10[V] step. The transmittance, refractive index and surface and cross-sectional shape of the deposited thin film were measured with an UV.-VIS. spectrophotometer, ellipsometer and SEM. Such condition as 1~2[mTorr] and near 300[V] voltage the transmittance was over 90[%] and the refractive index more than 2. Therefore, it was confirmed that the appropriate condition for making a highly transparent conductive electrode.

본 논문에서는 투명 전극용 ITO(Indium Tin Oxide) 박막의 성막 조건을 알아내기 위하여 DC(Direct Current) 마그네트론 스퍼터를 사용해 증착된 ITO 박막의 특성을 분석하였다. 실험 조건은 1~3[mTorr] 분위기압으로 조절하고 인가전압은 260~330[V]로 10[V]씩 스텝을 주어 실험을 진행하였다. 증착된 박막의 투과율, 굴절률 및 표면과 단면 형상을 자외선-가시광선 분광광도계, 타원편광분석기와 주사전자현미경으로 측정하였다. ITO 성막 조건 1~2[mTorr] 분위기압에서 300[V] 정도의 전압이 투과율이 90[%] 이상으로 우수하고 굴절률이 2이상 이였다. 따라서 높은 투명 전도성 전극을 만들기에 적절한 조건임을 확인하였다.

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References

  1. S. S. Nam, "Expansion and Application of Publication Contents in the Era of Smart Media," Korea Contents, vol.9, no.3, pp. 12-17, 2011.
  2. D. H. Seo and S. Y. Chun, "Growth Behavior of Nanocrystalline CrN Coatings by Inductively Coupled Plasma (ICP) Assisted Magnetron Sputtering," Journal of the Korean Ceramic Society, vol.49, no.6, pp. 556-560, 2012. https://doi.org/10.4191/kcers.2012.49.6.556
  3. S. W. Park and S. Y. Chun, "A Comparative Study of CrN Coatings Deposited by DC and Pulsed DC Asymmetric Bipolar Sputtering for a Polymer Electrolyte Membrane Fuel Cell (PEMFC) Metallic Bipolar Plate," Journal of the Korean Ceramic Society, vol.50, no.6, pp. 390-395, 2013. https://doi.org/10.4191/kcers.2013.50.6.390
  4. M. S. Kim, S. H. Yun and B. W. Kim, "Synthesis of ITO Nano-Particles by a SAS Method and Preparation of Conductive Film by Coating Them," Clean Technology, vol.13, no. 3. pp. 180-187, 2007.
  5. C. W. Hur, "The DC magnetron sputtering vacuum deposition of indium tin oxide thin film," The Korea Institute of Information and Commucation Engineering, vol.14, no.4, pp. 935-938, 2010. https://doi.org/10.6109/jkiice.2010.14.4.935
  6. J. W. Kim and H. B. Kim, "Properties of Sputtered Ga Doped ZnO Thin Film," KIEEME, vol.26, no.4, pp. 289-293, 2013.
  7. N. Selvakumar and H. C. Barshilia, "Review of physical vapor deposited (PVD) spectrally selective coatings for mid- and hightemperature solar thermal applications," Solar Energy Materials and Solar Cells, vol.98, pp. 1-23, 2012. https://doi.org/10.1016/j.solmat.2011.10.028
  8. Y. WANG, J. WANG, G. ZHANG, L. WANG and P. YAN, "Microstructure and Tribology of TiC(Ag)/a-C:H Nanocomposite Coatings Deposited by Unbalanced Magnetron Sputtering," Surf Coat Technol, vol.206, no.3299, 2012.
  9. D. A. Tuan, "Fabrication and characterization of n-IZO/p-Si and p-ZnO:(In, N)/n-Si thin film hetero-junctions by dc magnetron sputtering," j.inst.Korean. electr. electron.eng, vol.17, no.2, pp. 182-188, 2013.
  10. J. H. Lim, "Deformation of the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor characteristics by UV irradiation," j.inst.Korean.electr.electron.eng, vol.17, no.4, pp. 531-536, 2013.