Advances in materials Research

  • 제5권3호
  • /
  • Pages.131-140
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  • 2016
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  • 2234-0912(pISSN)
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  • 2234-179X(eISSN)
테크노프레스 (Techno-Press)
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DOI QR코드

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Fabrication and characterization of Copper/Silicon Nitride composites

  • Ahmed, Mahmoud A. (Department of Production Technology, Faculty of Industrial Education, Helwan University) ;
  • Daoush, Walid M. (Department of Production Technology, Faculty of Industrial Education, Helwan University) ;
  • El-Nikhaily, Ahmed E. (Mechanical Department, Faculty of Industrial Education, Suez University)
  • 투고 : 2016.05.29
  • 심사 : 2016.10.19
  • 발행 : 2016.09.25
⟨ 이전 논문 다음 논문 ⟩

초록

Copper/silicon nitride ($Cu/Si_3N_4$) composites are fabricated by powder technology process. Copper is used as metal matrix and very fine $Si_3N_4$ particles (less than 1 micron) as reinforcement material. The investigated powder were used to prepare homogenous ($Cu/Si_3N_4$) composite mixtures with different $Si_3N_4$ weight percentage (2, 4, 6, 8 and10). The produced mixtures were cold pressed and sintered at different temperatures (850, 950, 1000, $1050^{\circ}C$). The microstructure and the chemical composition of the produced $Cu/Si_3N_4$ composites were investigated by (SEM) and XRD. It was observed that the $Si_3N_4$ particles were homogeneously distributed in the Cu matrix. The density, electrical conductivity and coefficient of thermal expansion of the produced $Cu/Si_3N_4$ composites were measured. The relative green density, sintered density, electrical conductivity as well as coefficient of thermal expansion were decreased by increasing the reinforcement phase ($Si_3N_4$) content in the copper matrix. It is also founded that the sintered density and electrical conductivity of the $Cu/Si_3N_4$ composites were increased by increase the sintering temperature.

키워드

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