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The Proposed of the Encryption Method and Designed of the Secure Key Using Initial Bad Block Information Physical Address of NAND Flash Memory

NAND Flash Memory의 초기 Bad Block 정보 물리주소를 이용한 보안키 설계와 암호화 기법 제안

  • Kim, Seong Ryeol (Department of Computer & Information Engineering, Cheongju University)
  • Received : 2016.07.20
  • Accepted : 2016.08.04
  • Published : 2016.12.31

Abstract

Security key generation method by hardware or software related techniques have been variously proposed. This study analyzed the existing security key generation techniques, and propose the design of a new NAND Bad block based security key(NBSK) using a Bad Block information in the NAND flash memory, and propose a new encryption method using the same. Bad Block present in the NAND flash memory is also generated during production and sometimes occur during operations. Initial Bad Block information generated during production is not changed, Bad Block information that may occur during operation has a characteristic that can be changed periodically. This study is designed of the new secure key using initial Bad Block information physical address generated during manufacturing a NAND flash memory, and proposed of the new encryption method. With the proposed key and method can satisfy the general security characteristics, such as the creation and distribution of the secure key authentication and confidentiality and the simplicity of the security key.

보안키 생성기법으로 하드웨어 또는 소프트웨어 관련 생성기법들이 다양하게 제안되고 있다. 본 연구는 기존의 보안키 생성기법들을 분석하여, NAND 플래시 메모리의 Bad Block 정보를 이용하는 새로운 보안키인 NBSK(NAND Bad block based Secure Key)을 설계하고 이를 이용한 암호화기법을 제안한다. NAND 플래시 메모리에 존재하는 Bad Block은 생산중에 발생하기도 하고 사용 도중에 발생하기도 한다. 생산중 발생하는 초기 Bad Block 정보는 변하지 않으며, 사용도중 발생하는 Bad Block 정보는 주기적으로 변할 수 있다는 특성을 가지고 있다. 따라서 본 연구는 NAND 플래시 메모리 생산중에 발생하는 초기의 Bad Block 정보의 물리주소를 이용하여 보안키로 활용할 수 있도록 암호화키를 설계하고 이를 이용한 암호화 기법을 제안한다. 제안 기법을 이용하면 보안키의 생성과 분배의 단순성과 보안키의 인증성과 기밀성 등의 일반적인 보안 특성을 만족할 수 있다.

Keywords

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