Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition

  • Li, Ying (Institute for Materials Research, Tohoku University) ;
  • Katsui, Hirokazu (Institute for Materials Research, Tohoku University) ;
  • Goto, Takashi (Institute for Materials Research, Tohoku University)
  • Received : 2016.09.27
  • Accepted : 2016.10.24
  • Published : 2016.11.30
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Abstract

SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of $10^4Pa$ using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature ($T_{dep}$) range of 1150 - 1422 K. At $T_{dep}=1262K$, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate ($R_{dep}$) was $220{\mu}m\;h^{-1}$ at $T_{dep}=1262K$.

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References

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