Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
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Characteristics of the Mg and In co-doped ZnO Thin Films with Various Substrate Temperatures

RF 마그네트론 스퍼터를 이용하여 제작한 MIZO 박막의 특성에 미치는 기판 온도의 영향

  • Jeon, Kiseok (Solar Cell R&D Center, Applied Optics & Energy R&D Group, Korea Institute of Industrial Technology) ;
  • Jee, Hongsub (Solar Cell R&D Center, Applied Optics & Energy R&D Group, Korea Institute of Industrial Technology) ;
  • Lim, Sangwoo (Department of Chemical and Biomolecular Engineering, Yonsei University) ;
  • Jeong, Chaehwan (Solar Cell R&D Center, Applied Optics & Energy R&D Group, Korea Institute of Industrial Technology)
  • 전기석 (한국생산기술연구원 광에너지융합그룹) ;
  • 지홍섭 (한국생산기술연구원 광에너지융합그룹) ;
  • 임상우 (연세대학교 화공생명공학과) ;
  • 정채환 (한국생산기술연구원 광에너지융합그룹)
  • Received : 2016.11.21
  • Accepted : 2016.11.23
  • Published : 2016.12.31
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Abstract

Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.

Keywords

References

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