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Study on the Oxidative Polymerization of EDOT Induced by Graphene Oxide

산화 그래핀에 의한 EDOT의 산화중합에 관한 연구

  • Kim, Min Chae (Department of Polymer Engineering, College of Engineering, Suwon University) ;
  • Park, Min Ui (Department of Polymer Engineering, College of Engineering, Suwon University) ;
  • Park, No Il (Department of Polymer Engineering, College of Engineering, Suwon University) ;
  • Lee, Seul Bi (EverChemTech Co., Ltd.) ;
  • Lee, Seong Min (EverChemTech Co., Ltd.) ;
  • Yang, So Yeon (Department of Polymer Engineering, College of Engineering, Suwon University) ;
  • Choi, Jong Hyuk (Department of Polymer Engineering, College of Engineering, Suwon University) ;
  • Chung, Dae-won (Department of Polymer Engineering, College of Engineering, Suwon University)
  • 김민채 (수원대학교 공과대학 신소재공학과) ;
  • 박민의 (수원대학교 공과대학 신소재공학과) ;
  • 박노일 (수원대학교 공과대학 신소재공학과) ;
  • 이슬비 ((주)에버켐텍) ;
  • 이성민 ((주)에버켐텍) ;
  • 양소연 (수원대학교 공과대학 신소재공학과) ;
  • 최종혁 (수원대학교 공과대학 신소재공학과) ;
  • 정대원 (수원대학교 공과대학 신소재공학과)
  • Received : 2015.11.09
  • Accepted : 2015.11.18
  • Published : 2016.02.10

Abstract

In the presence of poly(4-styrene sulfonate) (PSS) and excess amount of graphene oxide (GO), we conducted in-situ polymerization of 3,4-ethylenedioxythiophene (EDOT) without an oxidant. XPS and IR spectroscopies of the product (GO-P) showed that PEDOT/PSS was successfully synthesized by oxidative polymerization of EDOT and hybridized with GO. GO-P displayed a stable aqueous suspension, however, the high content (42%) of GO in GO-P diminished electrical conductivity down to $15S{\cdot}m^{-1}$. Annealing of GO-P films at $200^{\circ}C$ for 8 hr induced partial reduction of GO and finally enhanced electrical conductivity up to $212S{\cdot}m^{-1}$.

과량의 GO 및 poly(4-styrene sulfonate) (PSS)의 존재 하에서 산화제 없이 3,4-ethylenedioxythiophene (EDOT)의 in-situ 중합 반응을 시도하였다. 반응물(GO-P)의 XPS, FT-IR 등의 분석을 통하여 산화제 없이도 모노머인 EDOT의 산화중합이 원활하게 진행되어 PEDOT/PSS가 합성되고 GO와 복합화된 것을 확인할 수 있었다. GO-P는 수분산성은 우수하였으나, 전기적 절연체인 GO가 42% 포함되어 있으므로 전기전도도는 $15S{\cdot}m^{-1}$로 매우 낮았다. 그러나 GO-P 필름을 $200^{\circ}C$에서 8 h 열처리하면 GO의 일부분이 환원되면서 전도도가 $212S{\cdot}m^{-1}$까지 향상되었다.

Keywords

References

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