Applied Science and Convergence Technology

한국진공학회 (The Korean Vacuum Society)
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A Study on Properties of RF-sputtered Al-doped ZnO Thin Films Prepared with Different Ar Gas Flow Rates

  • Han, Seung Ik (Department of Semiconductor Engineering, Cheongju University) ;
  • Kim, Hong Bae (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2016.11.14
  • 심사 : 2016.11.28
  • 발행 : 2016.11.30
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초록

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

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참고문헌

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피인용 문헌

  1. The Ag layer thickness effect on the figure of merit of the AZO/Ag bilayer prepared by DC sputtering of AZO and thermal evaporation method of Ag vol.6, pp.2, 2018, https://doi.org/10.1088/2053-1591/aaecd9
  2. Magnetron sputtered Al-doped ZnO thin film as saturable absorber for passively Q-switched Er/Yb double clad fiber laser vol.16, pp.4, 2019, https://doi.org/10.1088/1612-202X/aaff4a