Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

  • Kang, Hye Su (School of Electronics Engineering, Kyungpook National University) ;
  • Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) ;
  • Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) ;
  • Cho, Min Su (School of Electronics Engineering, Kyungpook National University) ;
  • Kang, In Man (School of Electronics Engineering, Kyungpook National University)
  • Received : 2015.11.12
  • Accepted : 2016.05.19
  • Published : 2016.11.01
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Abstract

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

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References

  1. Y. Zhang, M. Sun, Z. Liu, D. Piedra, H.-S. Lee, F. Gao, T. Fujishima and T. Palacios, "Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors," IEEE Transactions on Election Devices, vol. 60, no.7, pp. 2224-2230, July 2013. https://doi.org/10.1109/TED.2013.2261072
  2. H. Yu, L. McCarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts," IEEE Electron Device Lett., vol. 26, no. 5, pp. 283-285, May 2005. https://doi.org/10.1109/LED.2005.846583
  3. U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, "GaN-Based RF power devices and amplifiers," Proc. IEEE, vol. 96, no. 2, pp.287-305, Feb. 2008. https://doi.org/10.1109/JPROC.2007.911060
  4. M. S. P. Reddy, M.-K. Kwon, H.-S. Kang, D.-S. Kim, J.-H. Lee, V. R. Reddy, and J.-S. Jang, "Influence of Series Resistance and Interface State Density on Electrical Characteristics on Ru/Ni/n-GaN Schottky Structure," J. Semicond. Technol. Sci., vol. 13, no. 5, pp. 492-498, Oct. 2013. https://doi.org/10.5573/JSTS.2013.13.5.492
  5. S. Y. Kim, J. H. Seo, Y. J. Yoon, J. S. Kim, S. Cho, J.-H. Lee and I. M. Kang, "Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope," J. Electr. Eng. Technol., vol. 10, no. 3, pp. 1131-1137, May 2015. https://doi.org/10.5370/JEET.2015.10.3.1131
  6. C. B. Steven, I. Kiki, A. R. Jason, K. Walter, D. Park, B. D. Harry, D. K. Daniel, E. W. Alma, and L. H. Richard, "Trapping Effects and Microwave Power Performance in AlGaN/GaN HEMTs," IEEE Transactions on Election Devices, vol. 48, no. 3, pp. 465-471, March 2001. https://doi.org/10.1109/16.906437
  7. G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, "Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives," IEEE Transactions on Device and Materials Reliability, vol. 8, no. 2, pp. 332-343 June 2008. https://doi.org/10.1109/TDMR.2008.923743
  8. K. Horio, K. Yonemoto, H. Takayanagi, and H. Nakano, "Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors," J. Appl. Phys., vol. 98, no. 12, pp. 1818-1820, Dec. 2005.
  9. X. Wang, S. Huang, Y. Zheng, K. Wei, X. Chen, H. Zhang, and X. Liu, "Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffers." IEEE Transactions on Election Devices, vol. 61, no.5, pp. 1341-1346, May 2014. https://doi.org/10.1109/TED.2014.2312232
  10. Y. Zhang, M. Sun, D. Piedra, M. Azize, X. Zhang, T. Fujishima, and T. Palacios, "GaN-on-Si Vertical Schottky and p-n Diodes," IEEE Electron Device Lett., vol. 35, no. 6, pp. 618-620, June 2014. https://doi.org/10.1109/LED.2014.2314637
  11. I. Ben-Yaacov, Y.-K. Seck, U. K. Mishra, and S. P. DenBaars, "AlGaNGaN current aperture vertical electron transistors with regrown channels, " J. Appl. Phys., vol. 95, no. 4, pp. 2073-2078, Feb. 2004. https://doi.org/10.1063/1.1641520
  12. Y. Gao, I. Ben-Yaacov, U. K. Mishra, and E. L. Hu, "Optimization of AlGaN GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching, " J. Appl. Phys., vol. 96, no. 11, pp. 1818-1820, Dec. 2004.
  13. S. Chowdhury, M. H. Wong, B. L. Swenson, and U. K. Mishra, "CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion," IEEE Electron Device Lett., vol. 33, no. 1, pp. 41-43, Jan 2012. https://doi.org/10.1109/LED.2011.2173456
  14. S. Chowdhury, B. L. Swenson, and U. K. Mishra, "Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer," IEEE Electron Device Lett., vol. 29, no. 6, pp. 543-545, June 2008. https://doi.org/10.1109/LED.2008.922982
  15. SILVACO International, ATLAS User's Manual, Apr. 2012.
  16. Y. Tsividis, Operation and Modeling of the MOS Transistor, Oxford University Press, New York, USA, 1999, pp. 467-491, 500-504.