한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제48권5호
  • /
  • Pages.233-237
  • /
  • 2015
  • /
  • 1225-8024(pISSN)
  • /
  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지
DOI QR코드

DOI QR Code

Al-1%Si/SiO2/PSG 적층 박막에서 potassium 게터링에 관한 연구

A Study on the Potassium Gettering in Al-1%Si/SiO2/PSG Multilevel Thin Films

  • 김진영 (광운대학교 전자재료공학과)
  • Kim, Jin Young (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2015.09.04
  • 심사 : 2015.10.01
  • 발행 : 2015.10.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In order to investigate the potassium (K) gettering, Al-1%Si/$SiO_2$/PSG multilevel thin films were fabricated. Al-1%Si thin films and $SiO_2$/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the $SiO_2$/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the $SiO_2$/PSG passivation layers, and especially the interface gettering at the $SiO_2$/PSG and at the Al-1%Si/$SiO_2$ interfaces was observed. Potassium gettering in Al-1%Si/$SiO_2$/PSG multilevel thin films is considered to be caused by a segregation type of gettering.

키워드

참고문헌

  1. G. Kissinger, D. Kot, M. Klingsporn, M. Schubert, A. Sattler, and T. Muller, ESC J. Solid State Sci. and Technol., 4 (2015) N124. https://doi.org/10.1149/2.0151509jss
  2. J. Y. Kim, J. Korean Vac. Soc., 22 (2013) 126. https://doi.org/10.5757/JKVS.2013.22.3.126
  3. S. Krivec, M. Buchmayr, T. Detzel, M. Nelhiebel, H. Hutter, Surf. Interface Anal., 42 (2010) 886. https://doi.org/10.1002/sia.3240
  4. S. H. Garofalini, D. M. Zirl, J. Vac. Sci. Technol. A, 6 (1988) 975. https://doi.org/10.1116/1.575043
  5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley and Sons, New York (1981) 35.
  6. K. S. Choe, J. Kor. Mater. Res., 14 (2004) 9. https://doi.org/10.3740/MRSK.2004.14.1.009
  7. R. J. Falster, V. V. Voronkov, V. Y. Resnick, and M. G. Milvidskii, Electrochem. Soc. Proc., 5 (2004) 188.
  8. K. Sueoka, S. Sadamitsu, Y. Koike, T. Kihara, and H. Katahama, J. Electrochem. Soc. Proc., 147 (2000) 3074. https://doi.org/10.1149/1.1393857
  9. J. W. Mayer, S. S. Lau, Electronic Materials Science for Integrated Circuits in Si and GaAs, Macmillan, New York (1990) 280.
  10. C. Hang, Y Tian, C. Wang, N. Wang, Thin Solid Films, 524 (2012) 224. https://doi.org/10.1016/j.tsf.2012.10.014
  11. M. H. Lee, Thin Film Technology, Dooyangsa, Seoul (2009) 165.
  12. P. Kerber, L. M. Porter, L. A. McCullough, T. Kowalewski, M. Engelhard, and D. Baer, J. Vac. Sci. Technol. A, 30 (2012) 061407. https://doi.org/10.1116/1.4759238
  13. R. Saito, M. Nagatomo, N. Makino, S. Hayashi, M. Kudo, Appl. Surf. Sci., 203-204 (2003) 508. https://doi.org/10.1016/S0169-4332(02)00723-7
  14. S. B. Koo, H. K. Lee, J. Kor. Inst. Surf. Eng., 39 (2006) 166.

피인용 문헌

  1. Analysis of the Na Gettering in PSG/SiO2/Al-1%Si Multilevel Thin Films using XPS and SIMS vol.49, pp.5, 2016, https://doi.org/10.5695/JKISE.2016.49.5.467