한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제28권11호
  • /
  • Pages.711-714
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  • 2015
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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나노구조를 응용한 AlN 성장 방법 및 특성

High Quality AlN Layer Regrown on AlN Nanostructure by Hydride Vapor Phase Epitaxy

  • 투고 : 2015.10.19
  • 심사 : 2015.10.24
  • 발행 : 2015.11.01
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초록

In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.

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참고문헌

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