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안테나에 커플링되는 협대역 고출력 전자기파에 대한 저잡음 증폭기의 민감성 분석

The Susceptibility of LNA(Low Noise Amplifier) Due To Front-Door Coupling Under Narrow-Band High Power Electromagnetic Wave

  • 투고 : 2015.08.28
  • 심사 : 2015.09.16
  • 발행 : 2015.09.30

초록

본 연구는 안테나에 커플링되는 협대역 고출력 전자기파에 대한 저 잡음 증폭기(LNA)의 민감성 특성을 알아보았다. LNA 소자의 오동작/파괴는 MFR/DFR((Malfunction Failure Rate/Destruction Failure Rate)을 이용하여 소자의 민감성을 확인하였다. 그리고 LNA 소자의 내부 칩 상태는 Decapsulation 분석을 이용하여 손상부위를 관찰하였다. 협대역 고출력 전자기파 장치는 2.45 GHz 마그네트론을 사용하였고, LNA의 민간성 레벨은 협대역 고출력 전자기파의 전계강도에 따라 오동작/파괴율을 평가하였다. 그 결과, LNA 소자의 오동작은 셀프리셋(Self Reset)과 파워리셋(Power Reset)의 형태로 나타내었고, 이때 오동작 임계 전계강도는 각각 524 V/m, 1150 V/m로 측정되었다. 그리고 LNA의 소자의 파괴 임계 전계강도는 1530 V/m이다. 협대역 고출력 전자기파에 의한 LNA 소자의 내부 칩 파괴는 본드와이어, 온칩와이어 그리고 컴포넌트 세가지 형태로 관찰되었다. 이 결과로, 협대역 고출력 전자기파에 의한 반도체 전자회로의 내성평가 자료로 활용할 수 있을 것으로 판단된다.

This study has examined susceptibility of LNA(Low Noise Amplifier) due to Front-Door Coupling under Narrow-Band high power electromagnetic wave. M/DFR(Malfunction/Destruction Failure Rate) was measured to investigate the diagnostic of IC test. In addition, decapsulation analysis was used to understand the inside of the chip state in LNA devices. The experiments is employed as an open-ended waveguide to study the destruction effects of LNA using a 2.45 GHz Magnetron as a high power electromagnetic wave. The susceptibility level of LNA was assessed by electric field strength, and its failure modes were observed. The malfunction of LNA device has showed as the type of self-reset and power-reset. The electric field strength of malfunction threshold is 524 V/m and 1150 V/m respectively. Also, he electric field of destruction threshold is 1530 V/m. Three types of damaged LNA were observed by decapsulation analysis: component, onchipwire, and bondwire destruction. Based on these results, the susceptibility of the LNA can be applied to a database to help elucidate the effects of microwaves on electronic equipment.

키워드

참고문헌

  1. M. Backstrom, "HPM Test of a Car : A Representative Example of the Susceptibility of Civil Systems", 1999 13th International Zurich Symposium on Electromagnetic Compatibility, pp. 189-190, 1999.
  2. W. A. Radasky, C. E. Baum, M. W. Wik, "Introduction to the Special Issue on High-Power Electromagnetics (HPEM) and Intentional Electromagnetic Interference (IEMI)" , IEEE Transactions on Electromagnetic Compatibility, Vol. 46, No. 3, pp. 314-321, 2004 https://doi.org/10.1109/TEMC.2004.831899
  3. R. J. Barker, "High-Power Microwave Sources and Technologies" , IEEE Press, 2001
  4. Thomas Weber, Roland Krzikalla, Jan Luiken ter Haseborg, "Linear and Nonlinear Filters Suppressing UWB Pulses", Electromagnetic Compatibility, IEEE Transactions on, Vol. 46, Issue 3, Aug. 2004
  5. Tony nilsson, Rolf jasson, "Investigation of HPM front-door protection devices and component susceptibility", The. Swedish Defense Research Agency (FOI) Technical Report, Nov. 2005
  6. D.V. Giri, "High Power Electromagnetic Radiators: Nonlethal Weapons and Other Applications" , Harvard University Press Dec. 15, 2004
  7. M. Camp, H. Garbe, D. Nitsch, "Influence of the Technology on the Destruction Effects of Semiconductors by Impact of EMP and UWB Pulses" , 2002 IEEE International Symposium on Electromagnetic Compatibility, Vol. 1, pp. 87-92, 2002.
  8. M. Camp, H. Garbe, "Influence of Operationand Program-States on the Breakdown Effects of Electronics by Impact of EMP and UWB", 2003 IEEE International Symposium on Electromagnetic Compatibility, Vol. 2, pp. 1032-1035, 2003
  9. Kyechong Kim, "Critical Upsets of CMOS Inverters in Static Operation Due to High-Power Microwave Interference" IEEE Trans. on EMC, Vol. 49, No. 4, 2007
  10. Sun-Mook Hwang, Joo-Il Hong, Seung-Moon Han, Chang-Su Huh, Uk-Youl Huh, and Jin-Soo Choi, "The Susceptibility of Microcontroller Device with Coupling Caused by UWB-HPEM", PIERS, Proceedings, 2009
  11. Sun-Mook Hwang, Joo-Il Hong, Chang-Su Huh, "The Destruction Effects of Semiconductors by High Power Electromagnetic Wave" The Transactions of the Korean Institute of Electrical Engineers, Vol. 56, No. 9, pp.1638-1642, Sep. 2007
  12. M. Camp, H. Garbe, D. Nitsch, "Influence of the technology on the destruction effects of semiconducters by impact of EMP and UWB pulses", IEEE Trans. on EMC Vol. 1, pp. 87-92, 2002
  13. S. Korte, M. Camp, H. Garbe, "Hardware and Software Simulation of Transient Pulse Impact on Integrated Circuits", 2005 IEEE International Symposium on Electromagnetic Compatibility, Vol. 2, pp. 489-494, 2005.
  14. Daniel Nitsch, Michael Camp, Frank Sabath, Jan-Luiken ter Haseborg, Heyno Garbe, "Susceptibility of Some Electronic Equipment to HPEM Threats", IEEE Transactions on Electromagnetic Compatibility, Vol. 46, No. 3, Aug. 2004

피인용 문헌

  1. Damage Modeling of a Low-Noise Amplifier in an RF Front-End Induced by a High Power Electromagnetic Pulse vol.45, pp.5, 2017, https://doi.org/10.1109/TPS.2017.2684196
  2. 360° 전방위 화각을 가진 Dash Camera의 EMI 대응을 위한 Board 개발 vol.21, pp.3, 2015, https://doi.org/10.7471/ikeee.2017.21.3.248