한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제25권2호
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  • Pages.56-61
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  • 2015
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
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r면 사파이어 위에 HVPE로 성장된 a면 GaN 에피층의 성장온도 효과 및 1000℃에서의 V/III족 비의 효과

The effects of growth temperatures and V/III ratios at 1000℃ for a-plane GaN epi-layer on r-plane sapphire grown by HVPE

  • 하주형 (동의대학교 융합부품공학과 전자세라믹센터) ;
  • 박미선 (동의대학교 융합부품공학과 전자세라믹센터) ;
  • 이원재 (동의대학교 융합부품공학과 전자세라믹센터) ;
  • 최영준 ((주)루미지엔테크) ;
  • 이혜용 ((주)루미지엔테크)
  • Ha, Ju-Hyung (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Park, Mi-Seon (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Lee, Won-Jae (Department of Materials and Component Engineering, Electronic Ceramics Center, Dong-Eui University) ;
  • Choi, Young-Jun (LumiGNtech Co., Ltd.) ;
  • Lee, Hae-Yong (LumiGNtech Co., Ltd.)
  • 투고 : 2015.03.24
  • 심사 : 2015.04.17
  • 발행 : 2015.04.30
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초록

Ga source 채널의 HCl flow가 700 sccm, 그리고 V/III족 비가 10으로 고정되었을 때, r-면 사파이어 위에 HVPE로 성장된 a-면 GaN 에피층 특성에 대한 성장 온도 영향을 연구하였다. 추가적으로 성장온도가 $1000^{\circ}C$, 그리고 Ga source 채널의 HCl flow가 700 sccm으로 고정되었을 때, 공급가스에 대한 V/III족 비 영향에 대하여 연구하였다. 성장온도가 높아지면서, a-면 GaN 에피층에 대한 (11-20) 면의 Rocking curve(RC)의 반치폭 값이 감소하였고 a-면 GaN 에피층의 성장두께는 증가하였다. $1000^{\circ}C$에서 V/III족 비가 높아짐에 따라, (11-20) 면의 RC의 반치폭 값이 감소하였고, a-면 GaN 에피층의 성장두께가 증가하였다. $1000^{\circ}C$와 V/III족 비=10에서 성장된 a-면 GaN 에피층이 (11-20) 면에서 가장 낮은 RC 반치폭인 734 arcsec을 보이며, RC측정을 통한 (11-20) 면의 방위각 가장 작은 영향을 보여준다.

The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at $1000^{\circ}C$ and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi-layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at $1000^{\circ}C$, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at $1000^{\circ}C$ and V/III ratio = 10 showed the lowest value FWHM for RC of a-plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.

키워드

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피인용 문헌

  1. Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method vol.26, pp.3, 2016, https://doi.org/10.6111/JKCGCT.2016.26.3.089