한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제25권2호
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  • Pages.45-50
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  • 2015
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
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HVPE 방법에 의해 성장된 graded AlGaN 에피층의 특성

Characterizations of graded AlGaN epilayer grown by HVPE

  • 이찬빈 (한국해양대학교 전자소재공학과) ;
  • 전헌수 (한국해양대학교 전자소재공학과) ;
  • 이찬미 (한국해양대학교 전자소재공학과) ;
  • 전인준 (한국해양대학교 전자소재공학과) ;
  • 양민 (한국해양대학교 전자소재공학과) ;
  • 이삼녕 (한국해양대학교 전자소재공학과) ;
  • 안형수 (한국해양대학교 전자소재공학과) ;
  • 김석환 (안동대학교 물리학과) ;
  • 유영문 (부경대학교 LED-MCT R&BD 센터) ;
  • Lee, Chanbin (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Jeon, Hunsoo (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Lee, Chanmi (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Jeon, Injun (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Yang, Min (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Yi, Sam Nyung (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Ahn, Hyung Soo (Department of Electronic Material Engineering, Korea Maritime and Ocean University) ;
  • Kim, Suck-Whan (Department of Physics, Andong National University) ;
  • Yu, Young Moon (LED-MCT R&BD Center, Pukyong National University) ;
  • Sawaki, Nobuhiko (Department of Electrical and Electronics Engineering, AIT)
  • 투고 : 2015.02.05
  • 심사 : 2015.03.20
  • 발행 : 2015.04.30
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초록

본 논문에서는 Al 조성이 점진적으로 변화된 AlGaN 에피층을 HVPE (hydride vapor phase epitaxy) 방법에 의하여 성장하였다. 소스영역의 온도는 $950^{\circ}C$, 성장 영역의 온도는 $1145^{\circ}C$에서 연속적으로 (0001) 사파이어 기판위에 성장되었고, AlGaN 에피층은 시간당 100 nm의 성장률을 보였다. FE-SEM 측정과 EDS 측정으로부터 성장층의 Al 변화를 확인하였으며, AFM 측정결과 2인치 기판위에 성장된 graded AlGaN 에피층의 거칠기는 수십 nm였다. Al 조성의 변화는 XRD 측정에 의하여 확인하였으며, Al 조성 74 %의 (002) AlGaN의 주피크 관측과 함께 연속적으로 (002) AlN 층의 피크가 확인되었다. 이는 하나의 층에 사파이어 기판으로부터 Al 조성이 점진적으로 변화하는 에피층을 HVPE 방법으로 얻었음을 증명하며, 이 결과로부터 다양한 광소자 및 전자소자의 응용이 기대된다.

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.

키워드

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