JSTS:Journal of Semiconductor Technology and Science

  • 제15권2호
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  • Pages.243-248
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  • 2015
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn

  • Makhniy, V.P. (Chernivtsi National University) ;
  • Sklyarchuk, V.M. (Chernivtsi National University) ;
  • Vorobiev, Yu.V. (CINVESTAV-IPN Unidad Quretaro) ;
  • Horley, P.P. (CIMAV Chihuahua / Monterrey)
  • 투고 : 2014.10.27
  • 심사 : 2015.02.24
  • 발행 : 2015.04.30
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초록

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

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