참고문헌
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- K. Yamanaka, Y. Tuyama, H. Ohtsuka, S. Chaki, M. Nakayama, and Y. Hirano, "Internally-matched GaN HEMT high efficiency power amplifier for space solar power stations," in 2010 Asia-Pacif ic Microwave Conference Proceedings (APMC), Yokohama, Japan, 2010, pp. 119-122.
- K. Motoi, K. Matsunaga, S. Yamanouchi, K. Kunihiro, and M. Fukaishi, "A 72% PAE, 95-W, single-chip GaN FET S-band inverse Class-F power amplifier with a harmonic resonant circuit," in Proceedings of 2012 IEEE MTT-S International Microwave Symposium Digest, Montreal, Canada, 2012, pp. 1-3.
- N. Ui and S. Sano, "A 100W class-E GaN HEMT with 75% drain efficiency at 2GHz," in Proceedings of the 1st European Microwave Integrated Circuits Conference, Manchester, UK, 2006, pp. 72-74.
피인용 문헌
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- Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric vol.38, pp.8, 2017, https://doi.org/10.1109/LED.2017.2720719
- A high-efficiency gan power amplifier with harmonic control based on Si-IPDS vol.58, pp.9, 2016, https://doi.org/10.1002/mop.30003
- AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster vol.134, 2017, https://doi.org/10.1016/j.sse.2017.05.009
- -band push-push oscillators using load-pull technique vol.60, pp.11, 2018, https://doi.org/10.1002/mop.31480