The Proceeding of the Korean Institute of Electromagnetic Engineering and Science (한국전자파학회지:전자파기술)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
권호 표지

테라헤르츠 이미징을 위한 Si 기반의 헤테로다인 수신기

  • Published : 2015.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

Keywords

References

  1. F. Sizov, A. Rogalski, "THz detectors", Prog. Quantum Electron., 34(5), pp. 278-347, Sep. 2010. https://doi.org/10.1016/j.pquantelec.2010.06.002
  2. Q. J. Gu, Z. Xu, A. Tang and M.-C. F. Chang, "A D-band passive imager in 65 nm CMOS", IEEE Microw. Wirel. Compon. Lett., 22(5), pp. 263-265, May 2012. https://doi.org/10.1109/LMWC.2012.2192720
  3. O. Momeni, "A 260 GHz amplifier with 9.2 dB gain and -3.9 dBm saturated power in 65nm CMOS", in 2013 Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 140-141, 2013.
  4. K. Schmalz, J. Borngraber, Y. Mao, H. Rucker and R. Weber, "A 245 GHz LNA in SiGe technology", IEEE Microw. Wirel. Compon. Lett., 22(10), pp. 533-535, Oct. 2012. https://doi.org/10.1109/LMWC.2012.2218097
  5. E. Ojefors, B. Heinemann and U. R. Pfeiffer, "Subharmonic 220- and 320-GHz SiGe HBT receiver front-ends", IEEE Trans. Microw. Theory Tech., 60(5), pp. 1397-1404, May 2012. https://doi.org/10.1109/TMTT.2012.2190092
  6. D. Yoon, K. Song, J. Kim and J.-S. Rieh, "Si-based Sub-THz heterodyne imaging circuits", in 2014 Asian-Pacific Microw. Conf. (APMC), pp. 1136-1138, 2014.
  7. D. Yoon, N. Kim, K. Song, J. Kim, S. J. Oh and J.-S. Rieh, "D-band heterodyne integrated imager in a 65-nm CMOS technology", IEEE Microw. Wirel. Compon. Lett., 25(3), pp. 196-198, Mar. 2015. https://doi.org/10.1109/LMWC.2015.2390496
  8. D. Yoon, J.-S. Rieh, "A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology", IEEE Microw. Wirel. Compon. Lett., 24(8), pp. 557-559, Aug. 2014. https://doi.org/10.1109/LMWC.2014.2324177
  9. B. Heinemann, R. Barth, D. Bolze, J. Drews et al., "SiGe HBT technology with $f_T/f_{max}$ of 300 GHz/500 GHz and 2.0 ps CML gate delay", in 2010 Electron Devices Meeting (IEDM), pp. 30.5.1-30.5.4, 2010.