Applied Microscopy

  • 제45권1호
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  • Pages.16-22
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  • 2015
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  • 2287-5123(pISSN)
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  • 2287-4445(eISSN)
한국현미경학회 (Korean Society of Microscopy)
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In Situ Transmission Electron Microscopy Study on the Reaction Kinetics of the Ni/Zr-interlayer/Ge System

  • Lee, Jae-Wook (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Bae, Jee-Hwan (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Kim, Tae-Hoon (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
  • Shin, Keesam (School of Nano and Advanced Materials Engineering, Changwon National University) ;
  • Lee, Je-Hyun (School of Nano and Advanced Materials Engineering, Changwon National University) ;
  • Song, Jung-Il (Department of Mechanical Engineering, Changwon National University) ;
  • Yang, Cheol-Woong (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
  • 투고 : 2015.03.16
  • 심사 : 2015.03.23
  • 발행 : 2015.03.30
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초록

The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.

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참고문헌

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