Advances in nano research

  • 제3권1호
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  • Pages.49-54
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  • 2015
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  • 2287-237X(pISSN)
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  • 2287-2388(eISSN)
테크노프레스 (Techno-Press)
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DOI QR Code

Quantum modulation of the channel charge and distributed capacitance of double gated nanosize FETs

  • Gasparyan, Ferdinand V. (Department of Semiconductor Physics and Microelectronics, Yerevan State University) ;
  • Aroutiounian, Vladimir M. (Department of Semiconductor Physics and Microelectronics, Yerevan State University)
  • 투고 : 2015.02.10
  • 심사 : 2015.03.30
  • 발행 : 2015.03.25
⟨ 이전 논문 다음 논문 ⟩

초록

The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

키워드

참고문헌

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